Study on the Anodic Bonding Mechanism and Mechanical Properties of Glass and Silicon Carbide
As a typical kind of material in third-generation semiconductors,silicon carbide is widely used in Micro Electro Mechanical system.Glass and silicon carbide are successfully bonded together through an anodic bonding process.SEM testing results showed that the glass-SiC bonding interface is smooth and well-defined,and TEM testing results confirmed that the interface is tight and no defects could be found in the bonding interface,metallurgical bonding between the glass and silicon carbide is observed.After an etching process,a Na+depletion layer is found at the glass substrate.It is found that with the increment of the bonding temperature or voltage,the thickness of the Na+depletion layer generated at the interface gradually increased,with a maximum of 1.1μm.During the bonding process,the bonding current is characterized by three stages:the rising stage,the falling stage and the stable stage.Tensile testing results indicated that the fracture occurred at the bonding interface,then extends to glass substrate.The bonding strength increased with the increment of the bonding temperature and voltage with a maximum strength of 18.28 MPa at 500 ℃ and 1000 V.
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