In this paper,an efficiency calculation model and a simplified calculation method of semi-transparent crystalline silicon photovoltaic modules were proposed.First of all,the calculation formulas for efficiency loss and voltage drop from equivalent width cell strips to PV modules are established by analyzing four kinds of resistance from cells to modules.Then,the electrical parameter loss of 4 mm cells after laser cutting was tested and analyzed by using the home-made semi-transparent crystalline silicon photovoltaic modules.The experimental results showed that during the process from cells to modules,0.573 W power loss was generated on the 1 150 mm×750 mm module due to the overall circuit loss,accounting for 1.16％of the total module power.A voltage drop of 1.71 V was generated,which accounted for 8.67％of the total peak voltage.Based on the measured data,this paper discussed the damage caused by laser cutting to crystalline silicon cells from the perspectives of peak power,equivalent width loss and the filling factor(FF)through the cell-to-module(CTM)factor..It was found that the damage caused by laser cutting to crystalline silicon cells mainly resulted from P-N junction damage generating leakage currents.Therefore,a simple calculation method was proposed to convert the power loss of photovoltaic modules into the width loss of cells,so that the peak power can be quickly calculated in the production of photovoltaic modules.It proved that the CTM errors of the efficiency are less than 5％.The calculation model and the simple calculation method presented herein will provide guidance and a basis for simple and rapid evaluation and calculation of power generation efficiency of semi-transparent crystalline silicon photovoltaic modules.
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