首页|二极管选型对能量选择表面天线罩的性能影响

二极管选型对能量选择表面天线罩的性能影响

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能量选择表面技术主要通过周期结构加载非线性器件可自适应实现对高功率入射波的非线性响应,即"低通高阻".以二极管选型对能量选择表面天线罩性能的影响为研究目的,首先,通过注入实验评估不同型号二极管在高功率信号输入时的功率毁伤阈值,并进行相应的毁伤测试分析,实验结果表明:当输入功率达到 47 dBm时,BAP65 二极管内部电流过载引发热失控,导致毁伤;其次,选择 4 种不同型号的二极管评估它们对能量选择表面天线罩的插入损耗和屏蔽效能的影响,实验结果表明:在 0.75~0.9 GHz,加载MMP4401 二极管的能量选择表面具有低于 0.5 dB的插入损耗和大于 15 dB的屏蔽效能.此外,双管并联的能量选择表面表现出较好的屏蔽效果,而单管则具有更低的插入损耗.
The Impact of Diode Selection on the Performance of Energy Selective Surface Radome
Energy Selective Surface(ESS)is an effective technology in blocking high-power microwave to damage electronic equipment systems through front-door coupling.Such a technology can adaptively re-spond to incident high-power waves by loading nonlinear components such as diodes in a"low-pass high-re-sistance"way through periodic structures.In this study,the impact of diode selection on the performance of ESS radome is investigated.Firstly,the damage threshold of the diodes is evaluated through injection experiments under high-power signal input and conducted corresponding damage testing and analysis.The experimental results show that the current being overloaded,BAP65 diode is out of use when the input power reaches 47 dBm.And then,four kinds of diodes are selected to assess their effects on the insertion loss and shielding effectiveness of the ESS radome.The experimental results show that the energy selec-tive surface loaded with MMP4401 diodes exhibits a shielding effectiveness with insertion loss being below 0.5 dB and shielding effectiveness exceeding 15 dB within the frequency range of 0.75 to 0.9 GHz.Addi-tionally,the dual-diode configuration shows a superior shielding effectiveness,whereas the single-diode configuration exhibits a good insertion loss.

ESShigh power microwavePIN diodedamage threshold

李安淇、吴雄斌、徐一昊、周永金

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上海大学通信与信息工程学院特种光纤与光接入网重点实验室,上海,200444

能量选择表面 高功率微波 PIN二极管 毁伤阈值

国家自然科学基金

61971469

2024

空军工程大学学报
空军工程大学科研部

空军工程大学学报

CSTPCD北大核心
影响因子:0.55
ISSN:2097-1915
年,卷(期):2024.25(3)
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