SEE Upset Characteristics of BRAM in 28 nm Bulk FPGA by Pulsed Laser Test
In order to get a well-targeted Single Event Upset(SEU)mitigation for block RAM in SRAM based FPGA,a method is proposed for researching the Single Event Effect(SEE)characteristics of FPGA and get the Multiple-Cell Upset(MCU)pattern which reveal the upset mode of adjacent cells in BRAM.Pulsed laser tests were performed on 28 nm bulk Kintex-7 XC7K410T-FFG900 FPGA after analyzing the structure of configurable frame in Kintex-7 serial FPGA.The Single-Cell Upset and Multi-ple-Cell Upset induced by pulsed laser were observed during the test,and the cross section under differ-ent laser energy was tested.Besides,the Multiple-Cell Upset patterns of BRAM in FPGA were analyzed.The result shows that the proportion of Multi-Cell Upset climbs up with the increasing laser energy,while the proportion of Single-Cell Upset goes in the opposite way.Two to eleven bits Multiple-Cell Up-set may be induced by one pulsed laser without Multiple-Bit Upset in any logical word or byte accord-ing to the error injecting test result.Some SEE mitigation methods were suggested according to the re-sults of SEE tests to improve the reliability of SRAM based FPGA in space application.
Single event effectPulsed laserMultiple-Cell Upset(MCU)BRAM upset patternSEU fault-tolerant
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