摘要
极紫外光刻（Extreme Ultraviolet Lithography）,是以波长为10-14纳米的极紫外光作为光源,EUV技术最明显的特点是曝光波长一下子降到13.5nm,它能够把光刻技术扩展到32nm以下的特征尺寸。本文介绍了EUV的光刻原理和EUV光源的选择,以及EUV对掩膜版和光刻胶的技术要求,以及EUV的发展趋势。
Abstract
Extreme Uhraviolet Lithography, the light source is based on the wavelength of 10 to 14 nm very Uhraviolet light, the most obvious characteristics of EUV technology is the exposure wavelength suddenly dropped to 13.5nm, the feature size of lithography tec
关键词
极紫外光刻/UV光源/掩模/光刻胶Key words
EUV lithography/EUV source/Mask/Photoresist引用本文复制引用
出版年
2011
NETL
NSTL
万方数据