Development of Radiation Effect Testing System for Silicon Carbide Power Diode
This paper is to explore the radiation resistance and the radiation effect mechanism of silicon carbide power devices.Based on LabVIEW software development platform,a radiation effect test system for two commer-cial silicon carbide power diodes was established by using 2410 high voltage source meter and USB-GPIB interface adapter of Keithley company.On the basis of integrating Keithley 2410 high-voltage source meter function panel simulation and real-time control and information synchronization display,the system also realizes the real-time ac-quisition of voltage and current data,the display and storage of graphical I-V and I-t characteristic curves,and other functions.The developed testing system has been successfully applied in the heavy ion and proton radiation experiments of silicon carbide power diodes,providing technical support for further research on radiation effect ex-periments in the future.
Silicon carbide power diodeRadiation effectsSingle event burnoutTesting system
万方数据
维普
