Discussion and Improvement of Multisim TTL Experimental Circuit
Through simulation research on the static and dynamic characteristics of basic BJT switch circuits,typical TTL NOT gate circuits,and TTL NAND gate circuit characteristics,it was found that many types of gate circuits in the component library have problems such as inability to measure corresponding experimental data due to their parameters being too close to ideal.Therefore,the reasons for the problems were discussed,and the circuit design was improved.The results showed that the improved circuit can solve some of the problems in the original gate circuit.
NETL
NSTL
万方数据
