首页|Polarization-dependent photoinduced metal-insulator transitions in manganites

Polarization-dependent photoinduced metal-insulator transitions in manganites

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In correlated oxides,collaborative manipulation on light intensity,wavelength,pulse duration and polar-ization has yielded many exotic discoveries,such as phase transitions and novel quantum states.In view of potential optoelectronic applications,tailoring long-lived static properties by light-induced effects is highly desirable.So far,the polarization state of light has rarely been reported as a control parameter for this purpose.Here,we report polarization-dependent metal-to-insulator transition(MIT)in phase-separated manganite thin films,introducing a new degree of freedom to control static MIT.Specifically,we observed giant photoinduced resistance jumps with striking features:(1)a single resis-tancejump occurs upon a linearly polarized light incident with a chosen polarization angle,and a second resistance jump occurs when the polarization angle changes;(2)the amplitude of the second resistance jump depends sensitively on the actual change of the polarization angles.Linear transmittance measure-ments reveal that the origin of the above phenomena is closely related to the coexistence of anisotropic micro-domains.Our results represent a first step to utilize light polarization as an active knob to manip-ulate static phase transitions,pointing towards new pathways for nonvolatile optoelectronic devices and sensors.

Metal-insulator phase transitionsPolarization of lightElectronic phase separationSelective domain controllability

Lina Deng、Weiye Zhang、Hanxuan Lin、Lifen Xiang、Ying Xu、Yadi Wang、Qiang Li、Yinyan Zhu、Xiaodong Zhou、Wenbin Wang、Lifeng Yin、Hangwen Guo、Chuanshan Tian、Jian Shen

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State Key Laboratory of Surface Physics,Institute for Nanoelectronic Devices and Quantum Computing,and Department of Physics,Fudan University,Shanghai 200433,China

Zhangjiang Fudan International Innovation Center,Fudan University,Shanghai 201210,China

Shanghai Research Center for Quantum Sciences,Shanghai 201315,China

Collaborative Innovation Center of Advanced Microstructures,Nanjing 210093,China

Shanghai Branch,CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum P

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National Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaShanghai Municipal Science and Technology Major ProjectShanghai Municipal Natural Science FoundationShanghai Municipal Natural Science FoundationShanghai Municipal Natural Science FoundationShanghai Municipal Natural Science FoundationNational Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China

2022YFA14033002020YFA03091001199106012074075120740731207407112074080122740882019SHZDZX012050113060022ZR140810022ZR140740023ZR14072002021YFA14005032021YFA1400202121254031187412312221004

2024

科学通报(英文版)
中国科学院

科学通报(英文版)

CSTPCD
ISSN:1001-6538
年,卷(期):2024.69(2)
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