首页|Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system

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The growth of data and Internet of Things challenges traditional hardware,which encounters efficiency and power issues owing to separate functional units for sensors,memory,and computation.In this study,we designed an α-phase indium selenide(α-In2Se3)transistor,which is a two-dimensional ferroelectric semiconductor as the channel material,to create artificial optic-neural and electro-neural synapses,enabling cutting-edge processing-in-sensor(PIS)and computing-in-memory(CIM)functionalities.As an optic-neural synapse for low-level sensory processing,the α-In2Se3 transistor exhibits a high photore-sponsivity(2855 A/W)and detectivity(2.91 x 1014 Jones),facilitating efficient feature extraction.For high-level processing tasks as an electro-neural synapse,it offers a fast program/erase speed of 40 ns/50 μs and ultralow energy consumption of 0.37 aJ/spike.An AI vision system using α-In2Se3 tran-sistors has been demonstrated.It achieved an impressive recognition accuracy of 92.63％within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities.This study demonstrates the potential of the α-In2Se3 transistor in future vision hardware,enhancing processing,power efficiency,and AI applications.

Two-dimensional ferroelectricsemiconductorProcessing-in-sensorComputing-in-memorySynaptic deviceArtificial-intelligence vision system

Guangcheng Wu、Li Xiang、Wenqiang Wang、Chengdong Yao、Zeyi Yan、Cheng Zhang、Jiaxin Wu、Yong Liu、Biyuan Zheng、Huawei Liu、Chengwei Hu、Xingxia Sun、Chenguang Zhu、Yizhe Wang、Xiong Xiong、Yanqing Wu、Liang Gao、Dong Li、Anlian Pan、Shengman Li

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Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,State Key Laboratory of Chemo/Biosensing and Chemometrics,College of Materials Science and Engineering,Hunan University,Changsha 410082,China

Hunan Institute of Optoelectronic Integration,Hunan University,Changsha 410082,China

Hunan Institute of Advanced Sensing and Information Technology,Xiangtan University,Xiangtan 411105,China

School of Integrated Circuits,Peking University,Beijing 100871,China

Wuhan National Laboratory for Optoelectronics(WNLO),Huazhong University of Science and Technology(HUST),Wuhan 430074,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key R&D Program of ChinaNational Key R&D Program of ChinaNatural Science Foundation of Hunan ProvinceScience and Technology Innovation Program of Hunan ProvinceKey Program of Science and Technology Department of Hunan ProvinceKey Program of Science and Technology Department of Hunan ProvinceOpen Project Program of Wuhan National Laboratory for OptoelectronicsOpen Project Program of Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,ChinesChina Postdoctoral Science FoundationInnovation Project of Optics Valley Laboratory

621040665222100162090035U19A2090U22A2013852372146621011812022YFA14025012022YFA12043002021JJ200162021RC30612019XK20012020XK20012020WNLOKF01622ZS012023TQ0110OVL2023ZD002

2024

10.1016/j.scib.2023.12.027

科学通报(英文版)
中国科学院

科学通报(英文版)

CSTPCD
ISSN：1001-6538
年,卷(期)：2024.69(4)
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