首页|Adjustment methods of Schottky barrier height in one-and two-dimensional semiconductor devices
Adjustment methods of Schottky barrier height in one-and two-dimensional semiconductor devices
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The Schottky contact which is a crucial interface between semiconductors and metals is becoming increasingly significant in nano-semiconductor devices.A Schottky barrier,also known as the energy bar-rier,controls the depletion width and carrier transport across the metal-semiconductor interface.Controlling or adjusting Schottky barrier height(SBH)has always been a vital issue in the successful oper-ation of any semiconductor device.This review provides a comprehensive overview of the static and dynamic adjustment methods of SBH,with a particular focus on the recent advancements in nano-semiconductor devices.These methods encompass the work function of the metals,interface gap states,surface modification,image-lowering effect,external electric field,light illumination,and piezotronic effect.We also discuss strategies to overcome the Fermi-level pinning effect caused by interface gap states,including van der Waals contact and 1D edge metal contact.Finally,this review concludes with future perspectives in this field.
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