首页|Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study

Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study

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Developing low-power FETs holds significant importance in advancing logic circuits,especially as the fea-ture size of MOSFETs approaches sub-10 nanometers.However,this has been restricted by the thermio-nic limitation of SS,which is limited to 60 mV per decade at room temperature.Herein,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize sub-thermionic SS in MOSFETs.Through high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport poten-tial.This guides us to screen 192 candidates from the 2D material database comprising 1608 systems.Additionally,the physical relationship between the sub-thermionic transport performances and elec-tronic structures is further revealed,which enables us to predict 15 systems with promising device per-formances for low-power applications with supply voltage below 0.5 V.This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimen-tal exploration of intrinsic steep-slope MOSFETs.

2D materialsElectronic band structuresTransport propertiesSteep-slope transistorsDFT-NEGF calculations

Hengze Qu、Shengli Zhang、Jiang Cao、Zhenhua Wu、Yang Chai、Weisheng Li、Lain-Jong Li、Wencai Ren、Xinran Wang、Haibo Zeng

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MIIT Key Laboratory of Advanced Display Materials and Devices,College of Material Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China

School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China

Key Laboratory of Microelectronics Device and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China

Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong 999077,China

National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China

Department of Mechanical Engineering,The University of Hong Kong,Hong Kong 999077,China

Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China

School of Integrated Circuits,Nanjing University,Suzhou 215163,China

Suzhou Laboratory,Suzhou 215009,China

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Postgraduate Research & Practice Innovation Program of Jiangsu Province国家自然科学基金重大研究计划培育项目江苏省自然科学基金中央高校基本科研业务费专项江苏省"青蓝工程"项目江苏省"六大人才高峰"高层次人才项目Research Grant Council of Hong Kong

KYCX22_042891964103BK2018007130919011109XCL-035CRS_PolyU502/22

2024

10.1016/j.scib.2024.03.017

科学通报(英文版)
中国科学院

科学通报(英文版)

CSTPCD
ISSN：1001-6538
年,卷(期)：2024.69(10)
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