Identifying atomically thin isolated-band channels for intrinsic steep-slope transistors by high-throughput study

Hengze Qu ¹Shengli Zhang ¹Jiang Cao ²Zhenhua Wu ³Yang Chai ⁴Weisheng Li ⁵Lain-Jong Li ⁶Wencai Ren ⁷Xinran Wang ⁸Haibo Zeng¹

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作者信息

1. MIIT Key Laboratory of Advanced Display Materials and Devices,College of Material Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China
2. School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China
3. Key Laboratory of Microelectronics Device and Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China
4. Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong 999077,China
5. National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China
6. Department of Mechanical Engineering,The University of Hong Kong,Hong Kong 999077,China
7. Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China
8. National Laboratory of Solid State Microstructures,School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China;School of Integrated Circuits,Nanjing University,Suzhou 215163,China;Suzhou Laboratory,Suzhou 215009,China
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Abstract

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the fea-ture size of MOSFETs approaches sub-10 nanometers.However,this has been restricted by the thermio-nic limitation of SS,which is limited to 60 mV per decade at room temperature.Herein,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize sub-thermionic SS in MOSFETs.Through high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport poten-tial.This guides us to screen 192 candidates from the 2D material database comprising 1608 systems.Additionally,the physical relationship between the sub-thermionic transport performances and elec-tronic structures is further revealed,which enables us to predict 15 systems with promising device per-formances for low-power applications with supply voltage below 0.5 V.This work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimen-tal exploration of intrinsic steep-slope MOSFETs.

Key words

2D materials/Electronic band structures/Transport properties/Steep-slope transistors/DFT-NEGF calculations

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基金项目

Postgraduate Research & Practice Innovation Program of Jiangsu Province(KYCX22_0428)

国家自然科学基金重大研究计划培育项目(91964103)

江苏省自然科学基金(BK20180071)

中央高校基本科研业务费专项(30919011109)

江苏省"青蓝工程"项目()

江苏省"六大人才高峰"高层次人才项目(XCL-035)

Research Grant Council of Hong Kong(CRS_PolyU502/22)

出版年

2024

科学通报(英文版)

中国科学院

科学通报(英文版)

CSTPCD

ISSN：1001-6538

参考文献量60

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