首页|Ultrathin Sn-doped Ga2O3 for power field-effect transistors:Si-compatible 4-inch array with high-k gate dielectric
Ultrathin Sn-doped Ga2O3 for power field-effect transistors:Si-compatible 4-inch array with high-k gate dielectric
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Zi-Chun Liu、Jia-Cheng Li、Hui-Xia Yang、Han Yang、Yuan Huang、Yi-Yun Zhang、Pui-To Lai、Yuan-Xiao Ma、Ye-Liang Wang
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School of Integrated Circuits and Electronics and Yangtze Delta Region Academy,Beijing Institute of Technology,Beijing 100081,China
R&D Center for Solid-state Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Department of Electrical and Electronic Engineering,The University of Hong Kong,Hong Kong 999077,China
National Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of China
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