科学通报(英文版)2024，Vol.69Issue(12) ：1848-1851.DOI:10.1016/j.scib.2024.04.059

Ultrathin Sn-doped Ga2O3 for power field-effect transistors:Si-compatible 4-inch array with high-k gate dielectric

Zi-Chun Liu Jia-Cheng Li Hui-Xia Yang Han Yang Yuan Huang Yi-Yun Zhang Pui-To Lai Yuan-Xiao Ma Ye-Liang Wang
科学通报(英文版)2024，Vol.69Issue(12) ：1848-1851.DOI:10.1016/j.scib.2024.04.059
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Ultrathin Sn-doped Ga2O3 for power field-effect transistors:Si-compatible 4-inch array with high-k gate dielectric

Zi-Chun Liu 1Jia-Cheng Li 1Hui-Xia Yang 1Han Yang 1Yuan Huang 1Yi-Yun Zhang 2Pui-To Lai 3Yuan-Xiao Ma 1Ye-Liang Wang1
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作者信息

  • 1. School of Integrated Circuits and Electronics and Yangtze Delta Region Academy,Beijing Institute of Technology,Beijing 100081,China
  • 2. R&D Center for Solid-state Lighting,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
  • 3. Department of Electrical and Electronic Engineering,The University of Hong Kong,Hong Kong 999077,China
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基金项目

National Key R&D Program of China(2023YFB3611700)

National Natural Science Foundation of China(92163206)

National Natural Science Foundation of China(62101044)

National Natural Science Foundation of China(12321004)

出版年

2024
科学通报(英文版)
中国科学院

科学通报(英文版)

CSTPCD
ISSN：1001-6538
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