Memristive switching in the surface of a charge-density-wave topological semimetal

Jianwen Ma ¹Xianghao Meng ²Binhua Zhang ³Yuxiang Wang ¹Yicheng Mou ¹Wenting Lin ⁴Yannan Dai ⁵Luqiu Chen ⁵Haonan Wang ⁶Haoqi Wu ⁷Jiaming Gu ¹Jiayu Wang ¹Yuhan Du ²Chunsen Liu ⁸Wu Shi ⁹Zhenzhong Yang ⁶Bobo Tian ⁵Lin Miao ⁴Peng Zhou ¹⁰Chun-Gang Duan ⁵Changsong Xu ³Xiang Yuan ¹¹Cheng Zhang⁹

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作者信息

1. State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China
2. State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200241,China
3. Key Laboratory of Computational Physical Sciences(Ministry of Education),Institute of Computational Physical Sciences,State Key Laboratory of Surface Physics,Department of Physics,Fudan University,Shanghai 200433,China;Shanghai Qi Zhi Institute,Shanghai 200030,China
4. School of Physics,Southeast University,Nanjing 211189,China
5. Key Laboratory of Polar Materials and Devices(Ministry of Education),Department of Electronics,East China Normal University,Shanghai 200241,China;Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China
6. Key Laboratory of Polar Materials and Devices(Ministry of Education),Department of Electronics,East China Normal University,Shanghai 200241,China
7. State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China
8. Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China
9. State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China;Zhangjiang Fudan International Innovation Center,Fudan University,Shanghai 201210,China
10. State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China;Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China
11. State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200241,China;Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China;School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China
折叠

Abstract

Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conver-sion,and topological quantum computation.Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic research.However,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers.In this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe4)2I.We find that the surface state of(TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction.With the com-bination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable bar-rier height can be achieved in(TaSe4)2I-metal contact.By employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe4)2I with on/off ratio up to 103,endurance over 103 cycles,and good retention characteristics.The origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelec-tricity and band topology.The emergence of ferroelectricity in(TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the imple-mentation of topological materials in functional electronic devices.

Key words

Topological semimetal/Schottky barrier/Surface ferroelectricity/Memristor

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基金项目

National Key R&D Program of China(2022YFA1405700)

National Natural Science Foundation of China(12174069)

National Natural Science Foundation of China(92365104)

Shuguang Program from the Shanghai Education Development Foundation()

National Key R&D Program of China(2023YFA1407500)

National Natural Science Foundation of China(12174104)

National Natural Science Foundation of China(62005079)

National Key R&D Program of China(2022YFA1402901)

National Natural Science Foundation of China(12274082)

Shanghai Science and Technology Committee(23ZR1406600)

Shanghai Pilot Program for Basic Research-FuDan University 21TQ1400100(23TQ017)

China Postdoctoral Science Foundation(2022M720816)

National Key R&D Program of China(2022YFA1402902)

出版年

2024

科学通报(英文版)

中国科学院

科学通报(英文版)

CSTPCD

ISSN：1001-6538

参考文献量2

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