首页|Memristive switching in the surface of a charge-density-wave topological semimetal

Memristive switching in the surface of a charge-density-wave topological semimetal

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Owing to the outstanding properties provided by nontrivial band topology,topological phases of matter are considered as a promising platform towards low-dissipation electronics,efficient spin-charge conver-sion,and topological quantum computation.Achieving ferroelectricity in topological materials enables the non-volatile control of the quantum states,which could greatly facilitate topological electronic research.However,ferroelectricity is generally incompatible with systems featuring metallicity due to the screening effect of free carriers.In this study,we report the observation of memristive switching based on the ferroelectric surface state of a topological semimetal(TaSe4)2I.We find that the surface state of(TaSe4)2I presents out-of-plane ferroelectric polarization due to surface reconstruction.With the com-bination of ferroelectric surface and charge-density-wave-gapped bulk states,an electric-switchable bar-rier height can be achieved in(TaSe4)2I-metal contact.By employing a multi-terminal-grounding design,we manage to construct a prototype ferroelectric memristor based on(TaSe4)2I with on/off ratio up to 103,endurance over 103 cycles,and good retention characteristics.The origin of the ferroelectric surface state is further investigated by first-principles calculations,which reveal an interplay between ferroelec-tricity and band topology.The emergence of ferroelectricity in(TaSe4)2I not only demonstrates it as a rare but essential case of ferroelectric topological materials,but also opens new routes towards the imple-mentation of topological materials in functional electronic devices.

Topological semimetalSchottky barrierSurface ferroelectricityMemristor

Jianwen Ma、Xianghao Meng、Binhua Zhang、Yuxiang Wang、Yicheng Mou、Wenting Lin、Yannan Dai、Luqiu Chen、Haonan Wang、Haoqi Wu、Jiaming Gu、Jiayu Wang、Yuhan Du、Chunsen Liu、Wu Shi、Zhenzhong Yang、Bobo Tian、Lin Miao、Peng Zhou、Chun-Gang Duan、Changsong Xu、Xiang Yuan、Cheng Zhang

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State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing,Fudan University,Shanghai 200433,China

State Key Laboratory of Precision Spectroscopy,East China Normal University,Shanghai 200241,China

Key Laboratory of Computational Physical Sciences(Ministry of Education),Institute of Computational Physical Sciences,State Key Laboratory of Surface Physics,Department of Physics,Fudan University,Shanghai 200433,China

Shanghai Qi Zhi Institute,Shanghai 200030,China

School of Physics,Southeast University,Nanjing 211189,China

Key Laboratory of Polar Materials and Devices(Ministry of Education),Department of Electronics,East China Normal University,Shanghai 200241,China

Shanghai Center of Brain-inspired Intelligent Materials and Devices,East China Normal University,Shanghai 200241,China

State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China

Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China

Zhangjiang Fudan International Innovation Center,Fudan University,Shanghai 201210,China

School of Physics and Electronic Science,East China Normal University,Shanghai 200241,China

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National Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaShuguang Program from the Shanghai Education Development FoundationNational Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key R&D Program of ChinaNational Natural Science Foundation of ChinaShanghai Science and Technology CommitteeShanghai Pilot Program for Basic Research-FuDan University 21TQ1400100China Postdoctoral Science FoundationNational Key R&D Program of China

2022YFA140570012174069923651042023YFA140750012174104620050792022YFA14029011227408223ZR140660023TQ0172022M7208162022YFA1402902

2024

10.1016/j.scib.2024.05.010

科学通报(英文版)
中国科学院

科学通报(英文版)

CSTPCD
ISSN：1001-6538
年,卷(期)：2024.69(13)
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