首页|Non-equilibrium compression achieving high sensitivity and linearity for iontronic pressure sensors

Non-equilibrium compression achieving high sensitivity and linearity for iontronic pressure sensors

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Flexible pressure sensors with high sensitivity and linearity are highly desirable for robot sensing and human physiological signal detection.However,the current strategies for stabilizing axial microstruc-tures(e.g.,micro-pyramids)are mainly susceptible to structural stiffening during compression,thereby limiting the realization of high sensitivity and linearity.Here,we report a bending-induced non-equilibrium compression process that effectively enhances the compressibility of microstructures,thereby crucially improving the efficiency of interfacial area growth of electric double layer(EDL).Based on this principle,we fabricate an iontronic flexible pressure sensor with vertical graphene(VG)array electrodes.Ultra-high sensitivity(185.09 kPa-1)and linearity(R2=0.9999)are realized over a wide pressure range(0.49 Pa-66.67 kPa).It also exhibits remarkable mechanical stability during compression and bending.The sensor is successfully employed in a robotic gripping task to recognize the targets of different materials and shapes based on a multilayer perception(MLP)neural network.It opens the door to realizing haptic sensing capabilities for robotic hands and prosthetic limbs.

Artificial mechanoreceptorPressure sensorVertical graphemeIonic nanofiberObject recognitionE-skin

Jing Yang、Zhibin Li、Ying Wu、Yong Shen、Ming Zhang、Bin Chen、Guojiang Yuan、Songhua Xiao、Jiansong Feng、Xu Zhang、Yuwei Tang、Sunan Ding、Xiaolong Chen、Taihong Wang

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Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen 518055,China

School of Microelectronics,Southern University of Science and Technology,Shenzhen 518055,China

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education,Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education,Changsha Semiconductor Technology and Application Innovation Research Institute,College of Semiconductors(College of Integrated Circuits),Hunan University,Changsha 410082,China

School of Environmental and Chemical Engineering,Yanshan University,Qinhuangdao 066004,China

School of Integrated Circuits,Nanjing University,Suzhou 215163,China

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Guangdong Major Talent ProjectGuangdong Major Talent Project

2019CX01X0142019QN01C177

2024

10.1016/j.scib.2024.05.001

科学通报(英文版)
中国科学院

科学通报(英文版)

CSTPCD
ISSN：1001-6538
年,卷(期)：2024.69(14)
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