Antisymmetric planar Hall effect in rutile oxide films induced by the Lorentz force

Yongwei Cui ¹Zhaoqing Li ²Haoran Chen ¹Yunzhuo Wu ¹Yue Chen ³Ke Pei ⁴Tong Wu ¹Nian Xie ⁵Renchao Che ⁶Xuepeng Qiu ⁵Yi Liu ⁷Zhe Yuan ²Yizheng Wu⁸

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作者信息

1. Department of Physics,State Key Laboratory of Surface Physics,Fudan University,Shanghai 200433,China
2. Institute for Nanoelectronic Devices and Quantum Computing Fudan University,Shanghai 200433,China;Interdisciplinary Center for Theoretical Physics and Information Sciences,Fudan University,Shanghai 200433,China
3. Institute for Nanoelectronic Devices and Quantum Computing Fudan University,Shanghai 200433,China;Interdisciplinary Center for Theoretical Physics and Information Sciences,Fudan University,Shanghai 200433,China;Center for Advanced Quantum Studies and Department of Physics,Beijing Normal University,Beijing 100875,China
4. Laboratory of Advanced Materials,Shanghai Key Lab of Molecular Catalysis and Innovative Materials,Academy for Engineering & Technology,Fudan University,Shanghai,200438,China
5. Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology,School of Physics Science and Engineering,Tongji University,Shanghai 200092,China
6. Laboratory of Advanced Materials,Shanghai Key Lab of Molecular Catalysis and Innovative Materials,Academy for Engineering & Technology,Fudan University,Shanghai,200438,China;Zhejiang Laboratory,Hangzhou,311100,China
7. Center for Advanced Quantum Studies and Department of Physics,Beijing Normal University,Beijing 100875,China
8. Department of Physics,State Key Laboratory of Surface Physics,Fudan University,Shanghai 200433,China;Shanghai Research Center for Quantum Sciences,Shanghai 201315,China;Shanghai Key Laboratory of Metasurfaces for Light Manipulation,Fudan University,Shanghai 200433,China
折叠

Abstract

The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film.Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature,such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlat-tice.Here,we report an unambiguous experimental observation of the antisymmetric planar Hall effect(APHE)with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films.The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature.Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force.Our findings can be generalized to ferromagnetic mate-rials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization.In addition to significantly expanding knowledge of the Hall effect,this work opens the door to explore new members in the Hall effect family.

Key words

Antisymmetric planar Hall effect/Lorentz force/Rutile oxide films/Crystal symmetry

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基金项目

National Key Research and Development Program of China(2022YFA1403300)

National Natural Science Foundation of China(11974079)

National Natural Science Foundation of China(12274083)

National Natural Science Foundation of China(12221004)

National Natural Science Foundation of China(12174028)

National Natural Science Foundation of China(52231007)

National Natural Science Foundation of China(51725101)

National Natural Science Foundation of China(11727807)

Shanghai Municipal Science and Technology Major Project(2019SHZDZX01)

Shanghai Municipal Science and Technology Basic Research Project(22JC1400200)

Shanghai Municipal Science and Technology Basic Research Project(23dz2260100)

National Key Research and Development Program of China(2021YFA1200600)

National Key Research and Development Program of China(2018YFA0209100)

出版年

2024

科学通报(英文版)

中国科学院

科学通报(英文版)

CSTPCD

ISSN：1001-6538

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