Antisymmetric planar Hall effect in rutile oxide films induced by the Lorentz force

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外文摘要：The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film.Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature,such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlat-tice.Here,we report an unambiguous experimental observation of the antisymmetric planar Hall effect(APHE)with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films.The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature.Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force.Our findings can be generalized to ferromagnetic mate-rials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization.In addition to significantly expanding knowledge of the Hall effect,this work opens the door to explore new members in the Hall effect family.

外文关键词：

Antisymmetric planar Hall effectLorentz forceRutile oxide filmsCrystal symmetry

作者：

Yongwei Cui、Zhaoqing Li、Haoran Chen、Yunzhuo Wu、Yue Chen、Ke Pei、Tong Wu、Nian Xie、Renchao Che、Xuepeng Qiu、Yi Liu、Zhe Yuan、Yizheng Wu

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作者单位：

Department of Physics,State Key Laboratory of Surface Physics,Fudan University,Shanghai 200433,China

Institute for Nanoelectronic Devices and Quantum Computing Fudan University,Shanghai 200433,China

Interdisciplinary Center for Theoretical Physics and Information Sciences,Fudan University,Shanghai 200433,China

Center for Advanced Quantum Studies and Department of Physics,Beijing Normal University,Beijing 100875,China

Laboratory of Advanced Materials,Shanghai Key Lab of Molecular Catalysis and Innovative Materials,Academy for Engineering & Technology,Fudan University,Shanghai,200438,China

Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology,School of Physics Science and Engineering,Tongji University,Shanghai 200092,China

Zhejiang Laboratory,Hangzhou,311100,China

Shanghai Research Center for Quantum Sciences,Shanghai 201315,China

Shanghai Key Laboratory of Metasurfaces for Light Manipulation,Fudan University,Shanghai 200433,China

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基金：

National Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaShanghai Municipal Science and Technology Major ProjectShanghai Municipal Science and Technology Basic Research ProjectShanghai Municipal Science and Technology Basic Research ProjectNational Key Research and Development Program of ChinaNational Key Research and Development Program of China

项目编号：

2022YFA1403300119740791227408312221004121740285223100751725101117278072019SHZDZX0122JC140020023dz22601002021YFA12006002018YFA0209100

出版年：

2024

DOI：

10.1016/j.scib.2024.06.009

科学通报(英文版)

中国科学院

科学通报(英文版)

CSTPCD

ISSN：1001-6538

年,卷(期)：2024.69(15)