首页|Facile formation of van der Waals metal contact with Ⅲ-nitride semiconductors
Facile formation of van der Waals metal contact with Ⅲ-nitride semiconductors
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Metal-semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modem electronic devices.The exploration of van der Waals(vdW)metal contacts in semiconductor devices can potentially mitigate Fermi-level pinning at the metal-semiconductor interface,with partic-ular success in two-dimensional layered semiconductors,triggering unprecedented electrical and optical characteristics.In this work,for the first time,we report the direct integration of vdW metal contacts with bulk wide bandgap gallium nitride(GaN)by employing a dry transfer technique.High-angle annular dark-field scanning transmission electron microscopy explicitly illustrates the existence of a vdW gap between the metal electrode and GaN.Strikingly,compared with devices fabricated with electron beam-evaporated metal contacts,the vdW contact device exhibits a responsivity two orders of magni-tude higher with a significantly suppressed dark current in the nanoampere range.Furthermore,by lever-aging the high responsivity and persistent photoconductivity obtained from vdW contact devices,we demonstrate imaging,wireless optical communication,and neuromorphic computing functionality.The integration of vdW contacts with bulk semiconductors offers a promising architecture to overcome device fabrication challenges,forming nearly ideal metal-semiconductor contacts for future integrated electronics and optoelectronics.
Van der Waals contactGaNOptoelectronicsMetal-semiconductor contact
iGaN Laboratory,School of Microelectronics,University of Science and Technology of China,Hefei 230029,China
Information Materials and Intelligent Sensing Laboratory of Anhui Province,Institutes of Physical Science and Information Technology,Anhui University,Hefei 230601,China
Instrumentation and Service Center for Physical Sciences,Westlake University,Hangzhou 310024,China
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