首页|模压成型压力对氧化铟锡(ITO)靶材性能影响研究

模压成型压力对氧化铟锡(ITO)靶材性能影响研究

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以化学共沉淀-煅烧法制备的纳米ITO粉体为原料,通过模压、冷等静压成型,采用常压烧结法制备了 ITO靶材,研究了模压成型压力对ITO靶材相对密度、电阻率和晶粒尺寸的影响.结果表明,模压成型压力60 MPa且烧结条件适宜时,制得的ITO靶材相对密度为99.81%、电阻率为1.707 × 10-4 Ω·cm、平均晶粒尺寸为7.62 μm.研究结果可为ITO靶材的致密化与大型化生产提供借鉴.
Effects of Molding Pressure on Properties of Indium Tin Oxide(ITO)Sputtering Target
Nano ITO powders prepared by chemical coprecipitation plus calcination process were used as raw materials to prepare ITO sputtering target by molding and cold isostatic pressing,as well as conventional sintering.The effects of molding pressure on the relative density,resistivity,and grain size of ITO target were investigated.The results show that with the molding pressure of 60 MPa and the appropriate sintering conditions,the prepared ITO target has the relative density of 99.81%and resistivity of 1.707 × 10-4 Ω·cm,with an average grain size of 7.62 μm.The research results can provide reference for densification and large-scale production of ITO sputtering targets.

moldingindium tin oxide(ITO)conductive thin filmtarget materialconventional sinteringelectrical resistivitydensification

姜峰、谭泽旦、黄誓成、方志杰、陆映东、覃立仁、王永清、曾纪术

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广西科技大学机械与汽车工程学院,广西柳州 545616

广西晶联光电材料有限责任公司,广西柳州 545036

广西科技大学电子工程学院,广西柳州 545006

模压成型 氧化铟锡 导电薄膜 靶材 常压烧结 电阻率 致密化

国家自然科学基金广西壮族自治区重点研发计划广西壮族自治区科技计划柳州市科技计划

11864005桂科AB21196007桂科AD201590792020PAAA0608

2024

矿冶工程
长沙矿冶研究院有限责任公司 中国金属学会

矿冶工程

CSTPCD北大核心
影响因子:1.137
ISSN:0253-6099
年,卷(期):2024.44(1)
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