Nano ITO powders prepared by chemical coprecipitation plus calcination process were used as raw materials to prepare ITO sputtering target by molding and cold isostatic pressing,as well as conventional sintering.The effects of molding pressure on the relative density,resistivity,and grain size of ITO target were investigated.The results show that with the molding pressure of 60 MPa and the appropriate sintering conditions,the prepared ITO target has the relative density of 99.81％and resistivity of 1.707 × 10-4 Ω·cm,with an average grain size of 7.62 μm.The research results can provide reference for densification and large-scale production of ITO sputtering targets.
关键词
模压成型/氧化铟锡/导电薄膜/靶材/常压烧结/电阻率/致密化
Key words
molding/indium tin oxide(ITO)/conductive thin film/target material/conventional sintering/electrical resistivity/densification
维普
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