This paper presents an open-loop charge pump voltage boosting circuit tailored for FLASH memory applications based on the SMIC 0.18 μm 1P6M process technology.The circuit consists mainly of an oscillation circuit,a frequency division circuit,a non-overlapping timing circuit,a charge pump,and a high-voltage selection circuit.The circuit utilizes a high-voltage selection scheme to achieve self-bootstrapping of the charge pump voltage and adopts an open-loop non-feedback charge pump and an adjusted capacitance ratio to meet different output boost requirements.Simulation results demonstrate that under the conditions of a 1.8 V power supply voltage,an internal switch clock frequency of 50 kHz and a load of 5 mA,the charge pump achieves an output voltage of 3.3 V with a ripple amplitude of only 10 mV,acquiring an impressive boost efficiency of 96%.Compared to other charge pumps,this design showcases higher efficiency,thereby improving the output efficiency and capable of meeting various voltage boosting requirements.
charge pumpcircuit designbootstrap boosthigh voltage selectionboost efficiencyflash memory
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