面向FLASH存储器应用的电压自举电荷泵电路设计
Bootstrap Charge Pump Circuit for FLASH Memory Application
陈智峰 1陈煌伟 1陈继明 1陈铖颖 1黄渝斐1
作者信息
- 1. 厦门理工学院光电与通信工程学院,福建 厦门 361024
- 折叠
摘要
基于SMIC 0.18 μm 1P6M工艺,设计出一款面向FLASH存储器应用需求的开环电荷泵升压电路.该电路主要由振荡电路、分频电路、非交叠时序电路、电荷泵和高压选择电路组成.为实现电荷泵电压的自举,本设计采用高电压选择电路和开环无反馈结构电荷泵,通过调整电容比值,满足不同的输出升压需求.仿真结果表明,在电源电压为1.8 V、内部开关时钟频率为50 kHz、带载为5 mA的条件下,电荷泵的输出电压为3.3 V,纹波仅为10 mV,升压效率高达96%.与其他电荷泵相比,本设计提高了输出效率,可满足不同输出升压的需求.
Abstract
This paper presents an open-loop charge pump voltage boosting circuit tailored for FLASH memory applications based on the SMIC 0.18 μm 1P6M process technology.The circuit consists mainly of an oscillation circuit,a frequency division circuit,a non-overlapping timing circuit,a charge pump,and a high-voltage selection circuit.The circuit utilizes a high-voltage selection scheme to achieve self-bootstrapping of the charge pump voltage and adopts an open-loop non-feedback charge pump and an adjusted capacitance ratio to meet different output boost requirements.Simulation results demonstrate that under the conditions of a 1.8 V power supply voltage,an internal switch clock frequency of 50 kHz and a load of 5 mA,the charge pump achieves an output voltage of 3.3 V with a ripple amplitude of only 10 mV,acquiring an impressive boost efficiency of 96%.Compared to other charge pumps,this design showcases higher efficiency,thereby improving the output efficiency and capable of meeting various voltage boosting requirements.
关键词
电荷泵/电路设计/自举升压/高电压选择/升压效率/FLASH存储器Key words
charge pump/circuit design/bootstrap boost/high voltage selection/boost efficiency/flash memory引用本文复制引用
基金项目
福建省自然科学基金引导性项目(2023H0052)
厦门市重大科技项目(3502Z20221022)
出版年
2024
NETL
NSTL
万方数据