In order to improve the migration of Ag atoms in the metal reflective layer of the flip-chip GaN-based LED and the reflectivity and stability of the reflective layer,Ag was used as the thin film material of reflective layer for flip-chip GaN-based LED,TiW was evaporated on the Ag layer as protective layer,the Ag/TiW sputtering power,Ar gas flow rate and other parameters for the silver mirror preparation were adjusted,and influences of these factors on the photoelectric performance of the LED chip were then studied.The experimental results showed that when the sputtering power of Ag and TiW was 200 W and 3 000 W,the ambient Ar gas flow rate was 150 mL/min,the working voltage and optical output power of the LED chip were 2.91 V and 1 247.03 mW respectively,and the reflectivity of the metal reflective layer increased by about 0.31%in the 400-800 nm wavelength band,the reflectivity at 460 nm wavelength was 96.70%,and the comprehensive yield of the product increased by about 1.17%.
flip LED chipphotoelectric performancemetal reflector layerAg/TiW sputtering powerAr gas flow rates
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