Review of Hf-Based High-k Gate Dielectric for MOS Devices
As the size of metal oxide semiconductor(MOS)devices continues to shrink,HfO2 has become the most promising candidate material to replace traditional SiO2 gate dielectrics due to its high dielectric constant(k)and large band gap.This paper reviews the recent development of Hf-based high-k gate dielectric films.Aiming at the problems of low HfO2 crystallization temperature and the formation of interfacial layer between HfO2 thin film and Si substrate,resulting in large leakage current,high density of interface states,and low breakdown voltage,we reviewed two strategies reported in recent papers,namely,doping modification and inserting buffer layer.Then,the evolution of Hf-based materials from binary to doped oxide/complex,depositing Hf-based high-k gate dielectric on non-Si substrate and non-conventional MOS device architectures with Hf-based high-k gate dielectric are discussed using the specific examples,which can provide some ideas for the long-term development of MOS devices in integrated circuit(IC).
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维普
