Effect of O Content on Diffusion Barrier Properties of(FeCoCrNiAlRe)Ox High-Entropy Oxides
(FeCoCrNiAlRe)Ox high-entropy oxide ceramic thin films were deposited on monocrystalline silicon substrate by magnetron sputtering,and the resistance of different O contents to Cu-Si interdiffusion at 700℃annealing temperature was investigated.The films were characterized by SEM,EDS and XRD.The results showed that the high-entropy oxide thin films of(FeCoCrNiAlRe)Ox were dense in texture and uniform in element distribution.The high-entropy oxide thin films prepared with different oxygen contents were amorphous and had good diffusion resistance to Cu-Si.
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