首页|Constructing interfacial electric field and Zn vacancy modulated ohmic junctions ZnS/NiS for photocatalytic H2 evolution
Constructing interfacial electric field and Zn vacancy modulated ohmic junctions ZnS/NiS for photocatalytic H2 evolution
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Adjusting the interfacial transport efficiency of photogenerated electrons and the free energy of hydrogen adsorption through interface engineering is an effective means of improving the photocatalytic activity of semiconductor photocatalysts.Herein,hollow ZnS/NiS nanocages with ohmic contacts containing Zn vacancy(VZn-ZnS/NiS)are synthesized using ZIF-8 as templates.An internal electric field is constructed by Fermi level flattening to form ohmic contacts,which increase donor density and accelerate electron transport at the VZn-ZnS/NiS interface.The experimental and DFT results show that the tight interface and VZn can rearrange electrons,resulting in a higher charge density at the interface,and optimizing the Gibbs free energy of hydrogen adsorption.The optimal hydrogen production activity of VZn-ZnS/NiS is 10,636 μmol h-1 g-1,which is 31.9 times that of VZn-ZnS.This study provides an idea for constructing sulfide heterojunctions with ohmic contacts and defects to achieve efficient photocatalytic hydrogen production.
Zn vacancyOhmic contactDonor densityHollow nanocagesPhotocatalytic H2 production
Yi-lei Li、Xu-jia Liu、Yun-biao Wang、Ying Liu、Rui-hong Liu、Hui-ying Mu、Ying-juan Hao、Xiao-jing Wang、Fa-tang Li
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Hebei Key Laboratory of Photoelectric Control on Surface and Interface,College of Science,Hebei University of Science and Technology,Shijiazhuang,050018,China
Key Laboratory of Theoretical and Computational Photochemistry,Ministry of Education,College of Chemistry,Beijing Normal University,Beijing,100875,China
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