A batch of 4H-SiC detectors with the Schottky diode structure was fabricated,and the Ohmic electrodes were slow-annealed at various temperatures to achieve good Ohmic contact in a vacuum envi-ronment.The reverse I-V characteristics and energy resolution were compared and analysed.The Ohmic electrode performed best at 800 ℃,with an energy resolution of 1.36％at full depletion.The 4H-SiC detector was stable at 200 V bias,with a low leakage current and high energy resolution compared to other annealing temperatures.
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