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一种基于CMOS的小型化量子随机数产生装置

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为满足量子随机数发生器(QRNG)的小型化、集成化应用,设计了一种基于发光二极管(LED)光源并结合互补金属氧化物半导体(CMOS)探测的量子随机数发生器。量子随机数是以光量子固有特性确保随机数的高安全性,同时其低成本、高速率的处理方式也具有较高的应用价值。但是传统的基于高速模拟数字转换器(ADC)采样的信号处理方法存在成本高、系统复杂、后处理要求高等问题,并且ADC采样的不完美性还会引入伪随机的特性,降低系统的随机数特性,从而限制了其进一步的商业应用与推广。本文提出的量子随机数发生器基于电压比较二值法,利用像素间探测电压的随机性,以CMOS像素点探测输出的电压序列前后脉冲间的电压差值作为随机数熵源,从而获得量子随机数序列。该方法具备简单、可靠、易实现的优点,更利于产品的产业推广。
A miniaturized quantum random number generator device based on CMOS
To meet the miniaturization and integrated application of quantum random number generator(QRNG),a QRNG based on light emitting diode(LED)light source and complementary metal oxide semiconductor(CMOS)detection is designed.Quantum random numbers ensure the high security of random numbers based on the inherent characteristics of optical quantum,and their low cost and high speed processing methods also have high application value.However,traditional data sampling methods based on high-speed analog-to-digital converter(ADC)have the problems of high cost,complex system,and high post-processing requirements.In addition,the imperfection of ADC sampling also introduces pseudo-random characteristics,reducing the random number characteristics of the system,thus limiting its further commercial application and promotion.In the QRNG proposed in this paper,a binary method based on voltage comparison is proposed,which utilizes the randomness of the detection voltage between pixels,and uses the voltage difference between adjacent pulses in the output voltage sequence detected with CMOS pixels as a random number entropy source to obtain a quantum random number sequence.This method has the advantages of simplicity,reliability and easy realization,which is more conducive to the industrial promotion of products.

quantum opticsminiaturized quantum random number generatorbinary methodcomplementary metal oxide semiconductor

王其兵、王林松、王雅琦、李力、许华醒、王少华

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国开启科量子技术 (北京) 有限公司,北京 100089

中南大学自动化学院,湖南 长沙 410000

中国电子科技集团有限公司电子科学研究院,社会安全风险感知与防控大数据应用国家工程研究中心,北京 100041

中电科电科院科技集团有限公司,北京 100041

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量子光学 小型化量子随机数发生器 二值法 互补金属氧化物半导体

2024

量子电子学报
中国光学学会基础光学专业委员会 中国科学院合肥物质科学研究院

量子电子学报

CSTPCD北大核心
影响因子:0.67
ISSN:1007-5461
年,卷(期):2024.41(6)