首页|SiC JFET的短路失效模型及其失效机理研究

SiC JFET的短路失效模型及其失效机理研究

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以SiC JFET作为短路失效研究的器件,基于Matlab/Simulink仿真软件,建立SiC JFET的短路失效模型,同时添加迁移率模型和沟道泄露电流,其中,迁移率模型考虑了场强和温度变化,泄露电流考虑了Ith、Idiff、Iav三种电流分量,使短路失效模型更优于以往JFET失效模型.使用TCAD半导体器件仿真软件拟合了在短路失效时SiC JFET内部沟道电流的比重分布和走向路径等情况.结果表明:SiC JFET短路失效的主要原因是温度的迸发式增长,产生大量热集中于漏源极沟道处,从而产生泄露电流.最后,在此基础上,探究了SiC JFET的重复应力短路退化现象,以此进一步研究JFET器件的短路失效机理.
Study on Short Circuit Failure Model and Failure Mechanism of SiC JFET
SiC JFET is used as a device for short-circuit failure research.Based on Matlab/Simulink simulation software,a short-circuit failure model of SiC JFET is established.At the same time,a mobility model and channel leakage current are added.The mobility model takes into account field strength and temperature changes,and the leakage current takes into account the current components of Ith、Idiff and Iav,making the short-circuit failure mod-el better than previous JFET failure models.The TCAD semiconductor device simulation software is used to fit the proportion distribution and direction path of the internal channel current of SiC JFET during short-circuit failure.The results show that the main reason for the short circuit failure of SiC JFET is the explosive increase in temper-ature,which generates a large amount of heat concentrated at the drain source channel,resulting in leakage cur-rent.Finally,based on this,the repeated stress short-circuit degradation phenomenon of SiC JFET is investigated,in order to further investigate the short-circuit failure mechanism of JFET devices.

SiC JFETshort circuitfailure modelrepeated stress failurefailure mechanism

杨婷婷、刘航志、陆青松

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安徽城市管理职业学院 轨道交通学院,安徽 合肥 230000

安徽工业大学 电气与信息工程学院,安徽 马鞍山 243000

SiC JFET 短路 失效模型 重复应力失效 失效机理

安徽省高等学校科学研究项目(自然科学类)安徽城市管理职业学院自然科学项目

2022AH0403072023zrkx008

2024

兰州工业学院学报
兰州工业学院

兰州工业学院学报

影响因子:0.205
ISSN:1009-2269
年,卷(期):2024.31(4)
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