SiC JFET的短路失效模型及其失效机理研究
Study on Short Circuit Failure Model and Failure Mechanism of SiC JFET
杨婷婷 1刘航志 2陆青松1
作者信息
- 1. 安徽城市管理职业学院 轨道交通学院,安徽 合肥 230000
- 2. 安徽工业大学 电气与信息工程学院,安徽 马鞍山 243000
- 折叠
摘要
以SiC JFET作为短路失效研究的器件,基于Matlab/Simulink仿真软件,建立SiC JFET的短路失效模型,同时添加迁移率模型和沟道泄露电流,其中,迁移率模型考虑了场强和温度变化,泄露电流考虑了Ith、Idiff、Iav三种电流分量,使短路失效模型更优于以往JFET失效模型.使用TCAD半导体器件仿真软件拟合了在短路失效时SiC JFET内部沟道电流的比重分布和走向路径等情况.结果表明:SiC JFET短路失效的主要原因是温度的迸发式增长,产生大量热集中于漏源极沟道处,从而产生泄露电流.最后,在此基础上,探究了SiC JFET的重复应力短路退化现象,以此进一步研究JFET器件的短路失效机理.
Abstract
SiC JFET is used as a device for short-circuit failure research.Based on Matlab/Simulink simulation software,a short-circuit failure model of SiC JFET is established.At the same time,a mobility model and channel leakage current are added.The mobility model takes into account field strength and temperature changes,and the leakage current takes into account the current components of Ith、Idiff and Iav,making the short-circuit failure mod-el better than previous JFET failure models.The TCAD semiconductor device simulation software is used to fit the proportion distribution and direction path of the internal channel current of SiC JFET during short-circuit failure.The results show that the main reason for the short circuit failure of SiC JFET is the explosive increase in temper-ature,which generates a large amount of heat concentrated at the drain source channel,resulting in leakage cur-rent.Finally,based on this,the repeated stress short-circuit degradation phenomenon of SiC JFET is investigated,in order to further investigate the short-circuit failure mechanism of JFET devices.
关键词
SiC/JFET/短路/失效模型/重复应力失效/失效机理Key words
SiC JFET/short circuit/failure model/repeated stress failure/failure mechanism引用本文复制引用
基金项目
安徽省高等学校科学研究项目(自然科学类)(2022AH040307)
安徽城市管理职业学院自然科学项目(2023zrkx008)
出版年
2024
NETL
NSTL
万方数据