Study on Short Circuit Failure Model and Failure Mechanism of SiC JFET
SiC JFET is used as a device for short-circuit failure research.Based on Matlab/Simulink simulation software,a short-circuit failure model of SiC JFET is established.At the same time,a mobility model and channel leakage current are added.The mobility model takes into account field strength and temperature changes,and the leakage current takes into account the current components of Ith、Idiff and Iav,making the short-circuit failure mod-el better than previous JFET failure models.The TCAD semiconductor device simulation software is used to fit the proportion distribution and direction path of the internal channel current of SiC JFET during short-circuit failure.The results show that the main reason for the short circuit failure of SiC JFET is the explosive increase in temper-ature,which generates a large amount of heat concentrated at the drain source channel,resulting in leakage cur-rent.Finally,based on this,the repeated stress short-circuit degradation phenomenon of SiC JFET is investigated,in order to further investigate the short-circuit failure mechanism of JFET devices.
SiC JFETshort circuitfailure modelrepeated stress failurefailure mechanism