基于亚10nm环栅碳纳米晶体管的性能研究
Performance Study of Sub-10 nm Gate-all-around Carbon Nanotube Transistor Devices
陈露 1沈林华 1邓传馨 1徐力 1陈镇瓯 2周裕鸿1
作者信息
- 1. 宁波工程学院 电子与信息工程学院,浙江 宁波 315211
- 2. 宁波出入境边防检查站,浙江 宁波 315100
- 折叠
摘要
为了进一步减小纳米器件尺寸,以一维环栅碳纳米晶体管为研究对象,采用密度泛函理论和非平衡格林函数的第一性原理计算方法,探索在不同栅长和掺杂条件下晶体管的性能特性.研究表明:当电极掺杂浓度为 5×108 m-1 时,通过精确控制掺杂浓度和栅长,可以显著提升亚 10 nm栅碳纳米晶体管的性能.碳纳米管是构建场效应晶体管的理想沟道材料,可以为实现新原理纳米器件的研制和生产提供重要思路.
Abstract
To further reduce the size of nanodevices,this work employs the first-principles method of calculations density functional theory and non-equilibrium Green's functions to explore the performance characteristics of one-dimensional gate-all-around carbon nanotube field-effect transistors under different gate lengths and doping conditions.The study shows that the transistor exhibits excellent performance when the electrode doping concentration is 5×108 m-1,through precise control of the doping concentration and gate length,the performance of sub-10-nanometer Gate-All-around carbon nanotube field-effect transistors can be significantly enhanced.This provides an important clue for the development and production of new principle nanodevices.Carbon nanotubes are ideal channel materials for constructing field-effect transistors(FET),which can provide important ideas for the development and production of nanodevices with new principles.
关键词
碳纳米晶体管/二维材料/低功耗Key words
carbon nanotube transistors/two-dimensional materials/low power引用本文复制引用
基金项目
湖北省重点实验室开放课题项目(K202106)
浙江省自然科学基金项目(LY21F040004)
教育部重点实验室开放课题项目(KLISSS202409)
出版年
2024
NETL
NSTL
万方数据