Performance Study of Sub-10 nm Gate-all-around Carbon Nanotube Transistor Devices
To further reduce the size of nanodevices,this work employs the first-principles method of calculations density functional theory and non-equilibrium Green's functions to explore the performance characteristics of one-dimensional gate-all-around carbon nanotube field-effect transistors under different gate lengths and doping conditions.The study shows that the transistor exhibits excellent performance when the electrode doping concentration is 5×108 m-1,through precise control of the doping concentration and gate length,the performance of sub-10-nanometer Gate-All-around carbon nanotube field-effect transistors can be significantly enhanced.This provides an important clue for the development and production of new principle nanodevices.Carbon nanotubes are ideal channel materials for constructing field-effect transistors(FET),which can provide important ideas for the development and production of nanodevices with new principles.
carbon nanotube transistorstwo-dimensional materialslow power
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