研究了寄生电感对基于常通型碳化硅(silicon carbide,SiC)结型场效应晶体管(junction field effect transistor,JFET)串联结构的中压直流固态断路器(solid state circuit breaker,SSCB)过电压的影响,并在此基础上提出了一种SSCB的过电压抑制方法.首先介绍了基于常通型SiC JFET器件串联结构的SSCB拓扑及工作原理,建立了考虑完整回路寄生电感的SiC JFET串联结构开关过程的数学模型.其次利用MATLAB软件对数学模型进行解析计算,揭示了SSCB开关过程中寄生电感对SiC JFET器件串联运行时过电压的影响机理,并利用PSPICE仿真结果验证了理论分析的正确性.最后设计了一种适用于SSCB过电压抑制的单栅极驱动及缓冲电路,并通过SSCB实验样机验证了所提方法的有效性.
Influence of Parasitic Parameters on Overvoltage of Medium Voltage DC Solid State Circuit Breaker Based on Normally-On SiC JFET Devices and Its Suppression Method
This paper studies the influence of parasitic inductance on overvoltage of medium voltage DC solid state circuit breaker(SSCB)based on the normally-on silicon carbide(SiC)junction field effect transistor(JFET)series structure,and proposes an overvoltage suppression method for SSCB on this basis.Firstly,the topology and operation principle of the SSCB based on the series structure of the normally-on type SiC JFETs are introduced,and the mathematical model of the switching process for the SiC JFET series structure considering the parasitic inductance of the complete loop is established.Secondly,MATLAB software is used to analytically calculates the mathematical model,and the mechanism of overvoltage generated by parasitic inductance during SSCB switching to SiC JFET devices in series operation is revealed.At the same time,the simulation results of PSPICE verify the correct-ness of the theoretical analysis.Finally,single gate drive and snubber circuit are designed for SSCB overvoltage suppression,and the SSCB experimental prototype verifies the effectiveness of the proposed method.
solid state circuit breakersilicon carbide junction field effect transistor(SiC JFET)series structureparasitic parametersovervoltage
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维普
