首页|Exploration and mitigation of protrusion behavior in Ga-ion doped h-BN memristors
Exploration and mitigation of protrusion behavior in Ga-ion doped h-BN memristors
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Using hexagonal boron nitride(h-BN)to prepare resistive switching devices is a promising strategy.Various doping methods have aroused great interest in the semiconductor field in recent years,but many researchers have overlooked the various repetitive anomalies that occur during the testing process.In this study,the basic electrical properties and additive protrusion behavior of Ga-ion-doped h-BN memristors at micro-nanoscale during the voltage scanning process are investigated via atomic force microscopy(AFM)and energy dispersive spectroscopy.The additive protrusion behavior is subjected to exploratory research,and it is concluded that it is caused by anodic oxidation.An approach is proposed that involves filling the AFM chamber with nitrogen gas to improve the stability of memristor testing,and this method provides a solution for enhanced testing stability of memristors.
State Key Laboratory of Precision Measurement Technology and Instruments,School of Precision Instruments and Opto-electronics Engineering,Tianjin University,No.92 Weijin Road,Tianjin 300072,People's Republic of China
State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100190,People's Republic of China
Youth Fund of the National Natural Science Foundation of China
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