Studies on Preparation and Properties of Cu3N Thin Films
Copper nitride (Cu3N) thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering. The effects of sputtering parameters on the structure and proper-ties of the films were studied. The results show that with the increase of RF power and nitrogen partial pressure, the preferential crystalline orientation changeds from (111) to (100). With increase of sub-strate temperature from 70℃ to 200℃, the film changes from Cu3N phase to Cu phase. With increasing sputtering power from 80W to 120W, the optical energy decreases from 1.85eV to 1.41eV, while the electrical resistivity increases from 1.45 × 102Ω·cm to 2.99 × 103Ωcm, respectively.
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