首页|Grain boundary boosting the thermal stability of Pt/CeO2 thin films

Grain boundary boosting the thermal stability of Pt/CeO2 thin films

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Understanding how defect chemistry of oxide material influences the thermal stability of noble metal dopant ions plays an important role in designing high-performance heterogeneous catalytic systems.Here we use in-situ ambient-pressure X-ray photoemission spectroscopy(APXPS)to experimentally determine the role of grain boundary in the thermal stability of platinum doped cerium oxide(Pt/CeO2).The grain boundaries were introduced in Pt/CeO2 thin films by pulsed laser deposition without significantly change of the surface microstructure.The defect level was tuned by the strain field obtained using a highly/low mismatched substrate.The Pt/CeO2 thin film models having well defined crystallographic properties but different grain boundary structural defect levels provide an ideal platform for exploring the evolution of Pt-O-Ce bond with changing the temperature in reducing conditions.We have direct demonstration and explanation of the role of Ce3+induced by grain boundaries in enhancing Pt2+stability.We observe that the Pt2+-O-Ce3+bond provides an ideal coordinated site for anchoring of Pt2+ions and limits the further formation of oxygen vacancies during the reduction with H2.Our findings demonstrate the importance of grain boundary in the atomic-scale design of thermally stable catalytic active sites.

platinum doped cerium oxide(Pt/CeO2)pulsed laser depositionepitaxial thin filmsgrain boundariesdefect engineeringin-situ ambient-pressure X-ray photoemission spectroscopy

Luyao Wang、Xiaobao Li、Xiangchen Hu、Shuyue Chen、Zhehao Qiu、Yifan Wang、Hui Zhang、Yi Yu、Bo Yang、Yong Yang、Pasquale Orgiani、Carmela Aruta、Nan Yang

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Electrochemical thin月film group,School of physical science and technology,ShanghaiTech University,Shanghai 201210,China

State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

School of physical science and technology,ShanghaiTech University,Shanghai 201210,China

CNR-IOM,TASC National Laboratory,I-34149 Trieste,Italy

CNR-SPIN,UOS Roma,Area della Ricerca di Tor Vergata,Rome I-00133,Italy

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ShanghaiTech UniversityAnalytical Instrumentation Center and ChEM Center of ShanghaiTech UniversityAPXPS experiments were performed at BL02B01 of SSRF with the approval of the Proposal Assessing Committee of SiPME2 platformNatural Science Foundation of ChinaShanghai Key Research Program

Proposal 2019-SSRF-PT-0116131122790220ZR1436700

2023

纳米研究(英文版)

纳米研究(英文版)

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ISSN:
年,卷(期):2023.16(2)
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