首页|Single-cluster electronics using metallic clusters:Fabrications,regulations,and applications

Single-cluster electronics using metallic clusters:Fabrications,regulations,and applications

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Metallic clusters,ranging from 1 to 2 nm in size,have emerged as promising candidates for creating nanoelectronic devices at the single-cluster level.With the intermediate quantum properties between metals and semiconductors,these metallic clusters offer an alternative pathway to silicon-based electronics and organic molecules for miniaturized electronics with dimensions below 5 nm.Significant progress has been made in studies of single-cluster electronic devices.However,a clear guide for selecting,synthesizing,and fabricating functional single-cluster electronic devices is still required.This review article provides a comprehensive overview of single-cluster electronic devices,including the mechanisms of electron transport,the fabrication of devices,and the regulations of electron transport properties.Furthermore,we discuss the challenges and future directions for single-cluster electronic devices and their potential applications.

single-cluster junctionselectronic propertieselectron transportmetallic clustersstructure regulation

Caiyun Wei、Wei Xu、Shurui Ji、Ruiyun Huang、Junyang Liu、Wenqiu Su、Jie Bai、Jiale Huang、Wenjing Hong

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State Key Laboratory of Physical Chemistry of Solid Surfaces,National Engineering Research Centre of Chemicals for Electronic Manufacturing,College of Chemistry and Chemical Engineering & Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province(IKKEM),Xiamen University,Xiamen 361005,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaFundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities

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2024

纳米研究(英文版)

纳米研究(英文版)

CSTPCD
ISSN:
年,卷(期):2024.17(1)
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