首页|A self-powered solar-blind UV-enhanced Bi2Se3/a-Ga2O3/p-Si heterojunction photodetector for full spectral photoresponse and imaging
A self-powered solar-blind UV-enhanced Bi2Se3/a-Ga2O3/p-Si heterojunction photodetector for full spectral photoresponse and imaging
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Self-powered full-spectrum photodetectors(PDs)offer numerous advantages,such as broad application fields,high precision,efficiency,and multi-functionality,which represent a highly promising and potentially valuable class of detectors for future development.However,insensitive response to solar-blind ultraviolet(UV)and complex and expensive preparation processes greatly limit their performance and practical application.In this study,a self-powered full-spectrum Bi2Se3/a-Ga2O3/p-Si heterojunction PD with high sensitivity for solar-blind UV band prepared by a simple and low-cost two-step synthesis method is presented.Experiments results reveal that the developed PD has an excellent performance,such as high sensitivity from 200 to 850 nm,and a responsivity of 1.38 mA/W as well as a detectivity of 3.22 × 1010 Jones under 254 nm light at zero bias.Additionally,the unencapsulated device displays exceptional stability and imaging capabilities.It is expected that Bi2Se3/a-Ga2O3/p-Si heterojunction PD with a simple and low-cost synthesis method has great potential for self-powered full-spectrum photodetectors.
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