Metal-organic framework wafer enabled fast response radiation detection with ultra-low dark current

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外文摘要：Semiconductive metal-organic frameworks(MOFs)have attracted great interest for the electronic applications.However,dark currents of present hybrid organic-inorganic materials are 1000-10,000 times higher than those of commercial inorganic detectors,leading to poor charge transportation.Here,we demonstrate a ZIF-8(Zn(mim)2,mim=2-methylimidazolate)wafer with ultra-low dark current of 1.27 pA·mm-2 under high electric fields of 322 V·mm-1.The isostatic pressing preparation process provides ZIF-8 wafers with good transmittance.Besides,the presence of redox-active metals and small spatial separation between components promotes the charge hopping.The ZIF-8-based semiconductor detector shows promising X-ray detection sensitivity of 70.82 μC·Gy-1·cm-2 with low doses exposures,contributing to superior X-ray imaging capability with a relatively high spatial resolution of 1.2 Ip·mm-1.Simultaneously,good peak discrimination with the energy resolution of～43.78％is disclosed when the detector is illuminated by uncollimated 241Am@5.48 MeV α-particles.These results provide a broad prospect of MOFs for future radiation detection applications.

外文关键词：

MOFslead-freeα-particlesX-ray detection and imagingdark currentfast response

作者：

Meng Xu、Jianxi Liu、Wei Wu、Yang Chen、Donghao Ma、Sixin Chen、Wanqi Jie、Menghua Zhu、Yadong Xu

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作者单位：

State Key Laboratory of Solidification Processing,MIIT Key Laboratory of Radiation Detection Materials and Devices,& School of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China

基金：

National Natural Science Foundations of ChinaNational Natural Science Foundations of ChinaNatural Science Basic Research Plan in Shaanxi Province of ChinaND Basic Research FundsResearch Fund of the State Key Laboratory of Solidification Processing(NPU),China

项目编号：

U2032170621041942021GXLH-01-03G2022WD2022-TS-07

出版年：

2024

DOI：

10.1007/s12274-023-6217-6

纳米研究(英文版)

CSTPCD

ISSN：

年,卷(期)：2024.17(4)

参考文献量36