首页|Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation

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The discovery of two-dimensional(2D)semiconductor has opened up new avenues for the development of short-channel field-effect transistors(FETs)with desired electrical performance.Among them,orthorhombic tin-selenide(SnSe)has garnered increasing attention due to its potential applications in a variety of electronic,optoelectronic,and thermoelectric devices.However,the realization of high-performance SnSe FETs with low contact resistance(Rc)remains a challenge.Herein,we systematically investigate the contact of few-layer SnSe FETs through the modulation of native oxide on SnSe by using different metals.It is found that chromium(Cr)-contacted devices possess the best FET performance,such as electron mobility up to 606 cm2/(Vs)at 78 K,current on/off ratio exceeding 1010,and saturation current of～550 μA/μm,where a negligible Schottky barrier(SB)of～30 meV and a low contact resistance of～425 Ω μm are achieved.X-ray photoelectron spectroscopy(XPS)and cross-sectional electron dispersive X-ray spectroscopy(EDX)results further reveal that the improved contact arises from the Cr-induced reduction of native oxide(SnOx)to Sn,which thins the tunneling barrier for efficient electron injection.Our findings provide a deep insight into the 2D-metal contact of SnSe and pave the way for its applications in future nanoelectronics.

few-layer SnSe field-effect transistors(FETs)Cr contactnative oxidecontact resistance(Rc)Schottky barrier(SB)

Yue Zheng、Qi You、Zhentian Yin、Jian Tang、Ke Jiang、Zihao Xie、Henan Li、Cheng Han、Yumeng Shi

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International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education,Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 518060,China

College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaFundamental Research Foundation of ShenzhenScience and Technology Project of ShenzhenGuangdong Basic and Applied Basic Research Foundation

6200412861874074JCYJ20190808152607389JCYJ202205311008150342022A1515012055

2024

10.1007/s12274-023-6047-6

纳米研究(英文版)

纳米研究(英文版)

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ISSN：
年,卷(期)：2024.17(4)
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