首页|Defect engineering of W6+-doped NiO for high-performance black smart windows

Defect engineering of W6+-doped NiO for high-performance black smart windows

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In this report,W6+doping as a defect engineering strategy has been proposed to improve the electrochromic properties of NiO film.Further research was conducted to explore the electrochromic properties and the modified mechanism of W-doped NiO film.Compared to the pure NiO,W-doped NiO film exhibits improved electrochromic properties with significant optical modulation(61.56％at 550 nm),fast switching speed(4.42 s/1.40 s for coloring/bleaching),high coloration efficiency(45.41 cm2·C-1)and outstanding cycling stability(no significant attenuation after 2000 cycles)in Li-based electrolytes.Density functional theory(DFT)calculations combined with the experimental results indicate that the improved electrochromic properties were due to enhanced the electronic conductivity and ion conductivity after the introduction of W6+.The charge capacity of W-doped NiO has also been improved,and it can function with WO3 to achieve a high performance black electrochromic smart window(ECSW)by balancing charge.This work could advance the fundamental understanding of defect engineering as an effective strategy to boost the electrochromic properties of NiO anodic material,manifesting a significant development as a candidate counter electrode in high-performance black smart windows.

NiOdefect engineeringcharge balanceblack electrochromic windows

Yingjun Xiao、Xiang Zhang、Dukang Yan、Jianbo Deng、Mingjun Chen、Hulin Zhang、Wenhai Sun、Jiupeng Zhao、Yao Li

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School of Chemistry and Chemical Engineering,Harbin Institute of Technology,Harbin 150001,China

Center for Composite Materials and Structure,Harbin Institute of Technology,Harbin 150001,China

National Natural Science Foundation of ChinaFundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities

52002097HIT.OCEF.2022014HIT.OCEF.2021004

2024

10.1007/s12274-023-6106-z

纳米研究(英文版)

纳米研究(英文版)

CSTPCD
ISSN：
年,卷(期)：2024.17(4)
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