A simplified model for bubble growth was developed according to qualitative analysis of tem- perature profile in the thermal boundary layer of the vapor bubble. The model is based on the study of one- dimensional bubble growth model under the superheated conditions. The model is validated by the experi- mental data of vapor bubble growth in the superheated water and the numerical solution of dimethyl ether (DME) vapor bubble growth using the one-dimensional bubble growth model respectively. Compari- son shows that the model gives good accuracy and reduced computational cost than those of one- dimensional bubble growth model. Using the model, the DME bubble growth is simulated under the su- perheated conditions. The result shows that surface tension plays an important role in the controlled do- main of surface tension for bubble growth, and heat transfer controlled domain of bubble growth is con- trolled by thermal diffusivity while in the transition domain both surface tension and thermal diffusivity influence the bubble growth.