首页|拓扑绝缘体Bi2Te3薄膜电子结构第一性原理研究

拓扑绝缘体Bi2Te3薄膜电子结构第一性原理研究

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采用基于密度泛函理论第一性原理从头计算的MedeA-VASP软件包,在计算电子结构时考虑自旋轨道耦合作用的情况下,系统地计算了拓扑绝缘体Bi2Te3体块及其密排面(0 1 (-1) 5)薄膜从1层到6层的电子结构。通过计算发现,Bi2Te3体块是带隙为0。146 eV的半导体,随着薄膜层数的逐渐递增,Bi2Te3密排面(0 1 (-1) 5)薄膜出现了无能隙的拓扑表面态,这一结果与Bi2Te3 (111)面的结果一致。
First-principles Studies of Topological Insulator Bi2Te3 Nanosheets
Extensive attention has recently been focused on a newly discovered quantum state of matter,the so-called topological insulator.The electronic structures of bulk and close-packed planes thin films from one to six layers of Bi2Te3 employing spin-orbit coupling (SOC)is studied by MedeA-VASP of firstprinciple within the framework of density functional theory.By the calculations,the energy gap of bulk band structure is 0.146 eV.For Bi2Te3 films,the results show that the gapless topological surface states emerge with the film thickness in Bi2Te3 and this characteristic is in good accrod with Bi2Te3 (111)films.

topological insulatorfirst-principleelectronic structurestopological surface states

马静、雷玉玺、周剑平

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陕西师范大学物理学与信息技术学院,陕西 西安 710062

第一性原理 电子结构 拓扑绝缘体 拓扑表面态

国家自然科学基金中央高校基本科研业务费创新团队项目

51372148GK201401003

2016

宁夏大学学报(自然科学版)
宁夏大学

宁夏大学学报(自然科学版)

CSTPCDCHSSCD
影响因子:0.377
ISSN:0253-2328
年,卷(期):2016.37(2)
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