首页|K+掺杂对BNT基压电陶瓷结构与性能的影响

K+掺杂对BNT基压电陶瓷结构与性能的影响

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采用微波辅助溶胶-凝胶法合成xKBNT粉体,烧结后形成三方结构的xKBNT压电陶瓷,系统研究了K+掺杂浓度对xKBNT陶瓷微观结构、电导率、压电性能和介电性能的影响。结果表明:K+掺杂有利于改善xKBNT陶瓷的压电性能和介电性,掺杂引起的晶格畸变是影响陶瓷xKBNT晶粒尺寸、致密度,以及压电性能和介电性能的主要因素。0。04KBNT压电陶瓷的压电常数d33 为 28。8 pC/N,介电常数εr为 1 349。8,远高于单相BNT的d33和εr。
Effect of K+ Doping on the Structure and Properties of BNT-based Piezoelectric Ceramics
xKBNT powders were synthesized using the microwave-assisted sol-gel method and subsequently sintered to form xKBNT piezoelectric ceramics with a rhombohedral structure.The effects of K+doping concentration on the micro-structure,conductivity,piezoelectric and dielectric properties of xKBNT ceramics were systematically studied.It is found that K+doping enhances the piezoelectric and dielectric properties of xKBNT ceramics.The lattice distortion caused by doping significantly affects the grain size,relative density,piezoelectric and dielectric properties of xKBNT ceramics.The piezoelectric constant d33 and dielectric constant εr of 0.04KBNT are 28.8 pC/N and 1 349.8,respectively,which are significantly higher than those of pure BNT ceramics.

sodium bismuth titanatedoping modificationmicrowave-assisted sol-gel methodpiezoelectric constant

武家莹、房国丽、郭小雷、范玉杰

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北方民族大学材料科学与工程学院,宁夏 银川 750021

宁夏坤达自动化科技有限公司,宁夏 银川 750021

钛酸铋钠 掺杂改性 微波辅助溶胶-凝胶法 压电常数

银川市校企联合创新发展专项宁夏回族自治区重点研发计划重大(重点)项目北方民族大学高层次人才计划项目

2022XQ0022019BFG02018

2024

宁夏工程技术
宁夏大学

宁夏工程技术

影响因子:0.185
ISSN:1671-7244
年,卷(期):2024.23(2)
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