Ultraviolet position-sensitive detectors(PSDs)are expected to undergo harsh environments,such as high temperatures,for a wide variety of applications in military,civilian,and aerospace.However,no report on relevant PSDs operating at high temperatures can be found up to now.Herein,we design a new 2D/3D graphitic carbon nitride(g-C3N4)/gallium nitride(GaN)hybrid heterojunction to construct the ultraviolet high-temperature-resistant PSD.The g-C3N4/GaN PSD exhibits a high position sensitivity of 355 mV mm-1,a rise/fall response time of 1.7/2.3 ms,and a nonlinearity of 0.5％at room temperature.The ultralow formation energy of-0.917 eV atom-1 has been obtained via the thermodynamic phase stability calculations,which endows g-C3N4 with robust stability against heat.By merits of the strong built-in electric field of the 2D/3D hybrid heterojunction and robust thermo-stability of g-C3N4,the g-C3N4/GaN PSD delivers an excellent position sensitivity and angle detection nonlinearity of 315 mV mm-1 and 1.4％,respectively,with high repeatability at a high temperature up to 700 K,outperforming most of the other counterparts and even commercial silicon-based devices.This work unveils the high-temperature PSD,and pioneers a new path to constructing g-C3N4-based harsh-environment-tolerant optoelectronic devices.
Henan Key Laboratory of Diamond Optoelectronic Materials and Devices,Key Laboratory of Material Physics,Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China
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