High-Quality and Wafer-Scale Cubic Silicon Carbide Single Crystals

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外文摘要：Cubic silicon carbide(3C-SiC)has superior mobility and thermal conduction over that of widely applied hexagonal 4H-SiC.Moreover,much lower concentration of interfacial traps between insulating oxide gate and 3C-SiC helps fabricate reliable and long-life devices like metal-oxide-semiconductor field effect transistors.However,the growth of high-quality and wafer-scale 3C-SiC crystals has remained a big challenge up to now despite decades-long efforts by researchers because of its easy transformation into other polytypes during growth,limiting the development of 3C-SiC-based devices.Herein,we report that 3C-SiC can be made thermodynamically favored from nucleation to growth on a 4H-SiC substrate by top-seeded solution growth technique,beyond what is expected by classical nucleation theory.This enables the steady growth of high-quality and large-size 3C-SiC crystals(2-4-inch in diameter and 4.0-10.0 mm in thickness)sustainable.The as-grown 3C-SiC crystals are free of other polytypes and have high-crystalline quality.Our findings broaden the mechanism of hetero-seed crystal growth and provide a feasible route to mass production of 3C-SiC crystals,offering new opportunities to develop power electronic devices potentially with better performances than those based on 4H-SiC.

外文关键词：

cubic SiChigh-temperature solution growthhigh-temperature surface tensionsolid-liquid interfacial energywide band gap semiconductor

作者：

Guobin Wang、Da Sheng、Yunfan Yang、Hui Li、Congcong Chai、Zhenkai Xie、Wenjun Wang、Jiangang Guo、Xiaolong Chen

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作者单位：

Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China

University of Chinese Academy of Sciences,Beijing 100049,China

基金：

Beijing Municipal Science and Technology ProjectSpecial Project on Transfer and Conversion of Scientific and Technological Achievements of the Chinese Academy of Sciences

项目编号：

Z211100004821004KFJ-HGZX-042

出版年：

2024

DOI：

10.1002/eem2.12678

能源与环境材料(英文)

ISSN：

年,卷(期)：2024.7(4)