首页|Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

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Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications.State of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant substrates.Here,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process.Carbon(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer～4 × 1015 C-atoms/cm2).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu.As a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis.After removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly realized.The layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films.Molecular dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis approach.With the wide use of ion implantation technology in the microelectronics industry,this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.

device applicationsdual-metal smart Janus substrategrowth mechanismIon implantationlayer-tunable and transfer-free graphene

Bingkun Wang、Jun Jiang、Kevin Baldwin、Huijuan Wu、Li Zheng、Mingming Gong、Xuehai Ju、Gang Wang、Caichao Ye、Yongqiang Wang

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Department of Microelectronic Science and Engineering,School of Physical Science and Technology,Ningbo University,Ningbo 315211,China

Key Laboratory of Soft Chemistry and Functional Materials of MOE,School of Chemistry and Chemical Engineering Nanjing University of Science and Technology,Nanjing 210094,China

Center for Integrated Nanotechnologies,Los Alamos National Laboratory,Los Alamos 87545,New Mexico,USA

National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

Academy for Advanced Interdisciplinary Studies & Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen 518055,China

Guangdong Provincial Key Laboratory of Computational Science and Material Design,Southern University of Science and Technology,Shenzhen 518055,China

Materials Science and Technology Division,Los Alamos National Laboratory,Los Alamos 87545,New Mexico,USA

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National Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNingbo Youth Science and Technology Innovation Leading Talent ProjectOpen Research Fund of China National Key Laboratory of Materials for Integrated CircuitsGuangdong Basic and Applied Basic Research FoundationLDRD Seedling ER project at Los Alamos National Laboratory,NM,USACenter for Integrated Nanotechnologies(CINT)Office of Science User Facility operated for the U.S.Department of Energy(DOE)Office of ScienceLos Alamos National Laboratory,an affirmative actionequal opportunity employerTriad National Security,LLC,for the U.S.Department of Energy's NNSAGuangdong Provincial Key Laboratory of Computational Science and Material DesignCenter for Computational Science and Engineering at Southern University of Science and TechnologyShanghai Rising-Star ProgramYouth Innovation Promotion Association CAS

2022YFA120340062174093120753072023QL006NKLJC-K2023-012022A151511062820210867ER89233218CNA0000012019B03030100121QA1410900

2024

10.1002/eem2.12730

能源与环境材料(英文)

能源与环境材料(英文)

ISSN：
年,卷(期)：2024.7(5)