首页|CZTS基单晶材料研究进展和展望

CZTS基单晶材料研究进展和展望

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  • 国家科技期刊平台
  • NETL
  • NSTL
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  • 维普
Ⅰ2-Ⅱ-Ⅳ-Ⅵ4型半导体铜锌锡硫(CZTS)在成本、组成元素丰度、毒性和稳定性等方面具有突出优势，被认为是一种很有前途的太阳能吸收材料，应用于绿色和经济的光伏领域。尽管Cu2ZnSn(S，Se)4拥有与黄铜矿相似的晶体结构和光电性能，但其转换效率却远远低于Cu(In，Ga)Se2(23。5％)。传统研究多数集中在多晶薄膜材料和器件的光电性能，导致材料关键缺陷态甄别及其能带调控规律尚不清晰，成为限制CZTS基光电器件性能的瓶颈。本文综述了CZTS基单晶材料，详细介绍了其晶体结构和物理性质，概述了移动加热器法、碘输运法和熔盐法制备高质量单晶的工艺，多型纳米晶库的研究，以及天然锌黄锡矿的物性研究。根据制备的CZTS基单晶材料讨论了其光学和电学性能。最后总结了 CZTS基单晶材料在半导体器件的应用及目前存在的问题，为提高Ⅰ2-Ⅱ-Ⅳ-Ⅵ4型半导体材料器件的性能提供可能的发展方向。
Research Progress and Prospect of CZTS-Based Single Crystal Materials
Ⅰ2-Ⅱ-Ⅳ-Ⅵ4 type semiconductor copper-zinc-tin-sulfur(CZTS)has outstanding advantages in terms of cost,constituent element abundance,toxicity and stability,and is considered as a promising solar energy harvesting material for green and cost-effective photovoltaic applications.Cu2 ZnSn(S,Se)4 possesses chalcopyrite-like crystal structure and photoelectric performance.Nevertheless,the champion efficiency is still far behind its counterpart Cu(In,Ga)Se2(23.5％).The current research in this field focus on the optoelectronic properties of polycrystalline thin film materials and devices,leads to unclear identification of defect states and regulation of energy bands,which has become a bottleneck for breakthroughs in the performance of CZTS-based optoelectronic devices.This article reviews the research progress of CZTS-based single crystal materials,introduces its crystal structure and physical properties in detail,and summarizes the preparation technology of high-quality single crystal by travelling heater method,iodine transport method and flux method.The research on multi-type nanocrystal library and the physical properties of natural kesterite are also introduced.The optical and electrical properties of the prepared CZTS-based single crystal materials are discussed.Finally,the article summarizes the application of CZTS-based single crystal materials in semiconductor devices,points out the existing problems,and provides possible development directions for improving the performance of Ⅰ2-Ⅱ-Ⅳ-Ⅵ4 semiconductor material devices.

copper-zinc-tin-sulfurnatural kesteritedefect statephotoelectric propertytravelling heater methodiodine transport methodflux method

傅文峰、朱旭鹏、廖峻、汝强、薛书文、张军

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华南师范大学物理学院,广州 510006

岭南师范学院物理科学与技术学院,湛江 524048

铜锌锡硫 天然锌黄锡矿 缺陷态 光电性质 移动加热器法 碘输运法 熔盐法

国家自然科学基金国家自然科学基金广东省基础与应用基础研究基金广东省基础与应用基础研究基金湛江市科技计划

12004150616740732020A15151109982022A15150121232022A01011

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子：0.554
ISSN：1000-985X
年,卷(期)：2024.53(1)
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