首页|GaAsBi半导体材料的制备及应用研究进展

GaAsBi半导体材料的制备及应用研究进展

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  • 国家科技期刊平台
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稀铋Ⅲ-Ⅴ半导体材料在电子和光电子领域具有广泛的应用前景，其制备方法主要有分子束外延法(MBE)和金属有机物气相外延法(MOVPE)。本文聚焦于具有较大带隙收缩、温度不敏感以及强自旋轨道分裂等特殊物理特性的GaAsxBi1-x半导体材料，对其制备方法和研究进展进行了综述。研究人员对GaAsBi材料的研究主要集中在薄膜、多量子阱、纳米线和量子点材料的制备。在薄膜材料方面，侧重于研究制备工艺条件对GaAsBi薄膜的影响，例如低衬底温度、低生长速率和非常规的Ⅴ/Ⅲ束流比;在多量子阱材料方面，采用双衬底温度技术有效减少Bi偏析问题;对于纳米线和量子点材料，金属Bi作为表面活性剂可以改善材料的形貌和光学性能。然而，目前在该材料研究和应用方面仍存在挑战，如薄膜材料的结晶质量恶化和金属Bi分凝团聚，以及量子点材料中Bi的均匀性和形成机制的争议。解决这些问题对于提高GaAsxBi1-x半导体材料的质量和促进器件发展具有重要意义。
Research Progress on the Preparation and Application of GaAsBi Semiconductor Materials
Rare bismuth Ⅲ-Ⅴ semiconductor materials have broad prospects in the field of electronic and optoelectronic devices.The preparation methods mainly include molecular beam epitaxy(MBE)and metal-organic vapor phase epitaxy(MOVPE).This article focuses on GaAsxBi1-x semiconductor materials which show physical characteristics of large bandgap reduction,temperature insensitivity,strong spin-orbit splitting,and provides a review of their preparation methods and research progress.Researches on GaAsBi materials are mainly on the preparation of thin films,multiple quantum wells,nanowires,and quantum dots materials.In the aspect of thin films materials,the emphasis is on studying the influence of preparation process conditions on GaAsBi thin films,such as low substrate temperature,low growth rate,and unconventional Ⅴ/Ⅲ flux ratios;for multiple quantum wells materials,the use of dual substrate temperature techniques can effectively reduce Bi segregation;for nanowires and quantum dots materials,metallic Bi,as a surface-active agent,can improve the morphology and optical properties of the materials.However,there are still challenges in the research and application of this material,such as the degradation of crystalline quality in thin films materials,the problem of metallic Bi agglomeration,and controversies regarding the uniformity and formation mechanism of Bi in quantum dots materials.Addressing these issues is of great significance for improving the quality of GaAsxBi1-x semiconductor materials and promoting device development.

dilute bismuth Ⅲ-Ⅴ semiconductor materialGaAsBi thin filmquantum well materialquantum dot materialMBEMOVPE

马玉麟、郭祥、丁召

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贵州大学大数据与信息工程学院,贵阳 550025

贵州省微纳电子与软件技术重点实验室,贵阳 550025

半导体功率器件可靠性教育部工程研究中心,贵阳 550025

稀铋Ⅲ-Ⅴ半导体材料 GaAsBi薄膜 多量子阱材料 量子点材料 MBE MOVPE

国家自然科学基金贵州省科学技术基金贵州省科学技术基金半导体功率器件可靠性教育部研究中心开放基金贵州大学培育项目

61564002黔科合基础[2020]1Y271[2017]1055ERCME-KFJJ2019-07贵大培育[2019]58号

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子：0.554
ISSN：1000-985X
年,卷(期)：2024.53(1)
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