首页|退火温度对BCZT外延薄膜电学性能的影响及其导电机制分析

退火温度对BCZT外延薄膜电学性能的影响及其导电机制分析

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脉冲激光沉积技术制备Ba0。85Ca0。15Zr0。1Ti0。9O3(BCZT)外延薄膜时通常需要较高的沉积温度，且易含有氧空位缺陷。本文旨在提供一种基于脉冲激光沉积技术接后退火处理工艺，并成功在导电基板上制备了高质量BCZT外延薄膜，探究了退火温度对BCZT外延薄膜结构和性能的影响。不同温度(750、800、850和900 ℃)退火后薄膜均呈现纯净物相，且随着退火温度的升高，薄膜的铁电性能逐渐提高，2Pr由4。2 pcC/cm2提升至17。6 μC/cm2，但900 ℃退火温度下薄膜样品的漏电流问题最严重。通过拟合J-E关系表明，低电场下700℃至850℃退火后的薄膜均遵循欧姆导电机制，而900℃退火后的薄膜遵循空间电荷限制电流机制，高电场下所有退火温度下的薄膜均遵循福勒-诺德海姆隧穿机制。
Effect of Annealing Temperature on Electrical Properties of BCZT Epitaxial Films and Its Conductivity Mechanism
The pulsed laser deposition(PLD)technique for the preparation of Ba0.85Ca0.15Zr0.1Ti0.9O3(BCZT)epitaxial films usually requires high deposition temperature and is prone to contain oxygen vacancy defects.In order to provide a post-annealing treatment process based on PLD,high-quality BCZT epitaxial films were successfully prepared on conductive substrates,and the effects of annealing temperature on the structure and properties of BCZT epitaxial films were investigated.The films annealed at different temperatures of 750,800,850 and 900 ℃ show pure phases.The ferroelectric properties of the films are gradually improved as the annealing temperature increase,with 2Pr increasing from 4.2 to 17.6 μC/cm2.However,the sample at the annealing temperature of 900 ℃ has the most serious leakage current problem.By fitting the J-E relationship,it is found that the films annealed from 700 ℃ to 850 ℃ follow the Ohmic conduction mechanism at low fields,while the samples annealed at 900 ℃ follow the space charge limited current mechanism,and all the films follow the Fowler-Nordheim tunneling mechanism at high fields.

pulsed laser depositionBa0.85Ca0.15Zr0.1Ti0.9O3 epitaxial filmannealing temperaturephase structureelectrical propertyconductivity mechanism

彭倩文、吉祥

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化学与精细化工广东省实验室潮州分中心,潮州 521011

中国矿业大学材料与物理学院,徐州 221116

脉冲激光沉积 Ba0.85Ca0.15Zr0.1Ti0.9O3外延薄膜 退火温度 物相结构 电学性能 导电机制

化学与精细化工广东省实验室潮州分中心公开引进科研团队材料复合新技术国家重点实验室(武汉理工大学)开放基金

HJI202202A0052022-KF-33

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子：0.554
ISSN：1000-985X
年,卷(期)：2024.53(1)
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