Semiconducting silicon carbide(4H-SiC)exhibits characteristics of high hardness,notable brittleness,and excellent chemical stability.The commonly employed technique for achieving an ultra-smooth and flat surface is chemical mechanical polishing(CMP),which is utilized to process the 4H-SiC surface.Wet oxidation,as an important process of chemical-mechanical polishing of single-crystal 4H-SiC,directly affects the rate and surface quality of CMP.This paper provides a comprehensive overview of the current research status of wet oxidation of single-crystal 4H-SiC.It discusses the oxidants used in the wet oxidation of 4H-SiC,such as KMnO4,H2O2,K2S2O8.Based on this,it further summarizes commonly employed oxidation-enhancement methods,including photocatalytic-assisted oxidation,electrochemical oxidation,and Fenton reaction.The mechanism of wet oxidation of single-crystal 4H-SiC is analyzed from the aspect of theoretical calculation,and the future research direction of wet oxidation of 4H-SiC is proposed.
维普
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