Diamond possesses an ultra-high thermal conductivity and a wide band-gap.Its electrical resistance could be adjusted for the semiconductor application by increasing the electron and vacancy content introduced by doping different elements.Therefore,diamond is thought to be the final wide band-gap semiconductor materials.This paper firstly introduces the synthesis of diamond by high-pressure and high-temperature(HPHT)method,and then systematically reviews the current status and developments of diamond doping by HPHT.The effects of single-element doping,such as N,B,P,and S,as well as multi-elements co-doping in the diamond crystal growth and its electrical properties are analyzed.In additional,this paper summaries the study diamond doping using first-principle calculation.HPHT annealing could effectively change the combinations of doped elements and the associated vacancies and their distribution.This paper reviews the adjustment of nitrogen-related color centers in diamond by HPHT annealing,elucidating the formation mechanisms of various nitrogen-related color centers.Finally,This paper prospects the potential optical and electrical properties of doped diamonds,highlighting the importance of theoretical calculations and experimental methods for multi-element co-doping investigation to enhance the performance of doped diamonds.
维普
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