Boron Doping Technology for the Front Polysilicon Layer of Full TOPCon Cells
In order to improve the efficiency of tunneling oxide passivated contact(TOPCon)cells,a p-type tunneling oxide passivation contact structure was fabricated on the front of N-type TOPCon cells through high-temperature diffusion,improving the emitter passivation performance and reducing front metal recombination.The effects of different deposition time,drive-in temperature,drive-in time and other process parameters on the passivation performance and doping curve of experimental samples were investigated.The experimental results show that when the deposition time is 1 500 s,the drive-in temperature is 920 ℃,and the drive-in time is 20 min,the boron doped polysilicon layer can achieve better passivation performance and boron doping concentration,with the doping concentration of sample poly crystalline silicon layer reaching 1.40 x 1020 cm-3.The implied open circuit voltage(iV0c)is greater than 720.0 mV.The photoelectric conversion efficiency of TOPCon cells prepared based on this parameter can reach 23.89％,corresponding to a short-circuit current density of 39.36 mA/cm2,the open circuit voltage(Voc)is 726.4 mV,and the fill factor(FF)is 83.54％
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维普
