首页|铌酸锂晶体的缺陷结构

铌酸锂晶体的缺陷结构

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铌酸锂是集电光、声光、压电和非线性等性能于一体的人工晶体,在光子学及光电子学等领域具有广泛的应用前景,被誉为"光学硅"或"光子学硅"。近年来随着基于薄膜铌酸锂的集成光子学的迅猛发展,铌酸锂晶体受到更加广泛的关注。然而铌酸锂是一种典型的非化学计量比晶体,其含有大量的本征缺陷,严重影响了晶体性能;同时,铌酸锂晶格对众多杂质离子都有良好的固溶性,而且晶体的性质随着杂质离子的种类和浓度不同产生显著变化。如同单晶硅等半导体材料的缺陷工程,缺陷已经并且必将继续对晶体的性能及铌酸锂集成光子学产生重要影响。本文对铌酸锂晶体的缺陷结构做了一个简要的回顾,尤其是近期涉及薄膜铌酸锂晶体的相关内容,涵盖了本征缺陷结构、非本征缺陷结构、缺陷结构的表征、缺陷结构的理论计算、缺陷结构与晶体性能的构效关系等方面,以期对当前的铌酸锂集成光子学研究贡献微薄之力。
Defect Structure of Lithium Niobate Crystals
Lithium niobate is an artificial crystal which integrates electro-optic,acousto-optic,piezoelectric and nonlinear properties,and has been known as"optical silicon"or"photonic silicon".In recent years,with the rapid development of integrated photonics based on thin film lithium niobate,lithium niobate crystals have received more and more attention.However,lithium niobate is a typical non-stoichiometric crystal,it contains a large number of intrinsic defects,which seriously affects its characteristics.The lithium niobate lattice has good solid-solution to many impurity ions,moreover,its properties vary significantly with the types and concentrations of dopants.As with defect engineering ofsemiconductors such as silicon,defects have and will continue to have an important effect on crystal performance and integrated photonics based on thin film lithium niobate.This paper briefly reviews the defect structure of lithium niobate crystals,especially the recent progress on thin film lithium niobate crystals,including the intrinsic defect structure,extrinsic defect structure,characterization of defect structure,theoretical calculation of defect structure,and structure-activity relationship between defect structure and crystal properties.We hope it helpful to the current research of lithium niobate integrated photonics.

lithium niobatedefect structurethin film lithium niobateintegrated photonicsstructure-activity relationship

刘宏德、王维维、张中正、郑大怀、刘士国、孔勇发、许京军

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南开大学物理科学学院&泰达应用物理研究院,弱光非线性光子学教育部重点实验室,天津 300071

石家庄铁道大学数理系,石家庄 050043

铌酸锂 缺陷结构 薄膜铌酸锂 集成光子学 构效关系

国家自然科学基金天津市自然科学基金天津市自然科学基金

1203401021JCZDJC0030021JCQNJC00250

2024

人工晶体学报
中材人工晶体研究院

人工晶体学报

CSTPCD北大核心
影响因子:0.554
ISSN:1000-985X
年,卷(期):2024.53(3)
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