氨热法GaN单晶生长的位错密度演变研究
Dislocation Density Evolution Study of GaN Single Crystal Growth by Ammonothermal Method
夏政辉 1李腾坤 2任国强 2解凯贺 2卢文浩 2李韶哲 1郑树楠 2高晓冬 2徐科3
作者信息
- 1. 中国科学院苏州纳米技术与纳米仿生研究所,苏州 215123;中国科学技术大学纳米科学与技术学院,合肥 230026
- 2. 中国科学院苏州纳米技术与纳米仿生研究所,苏州 215123
- 3. 中国科学院苏州纳米技术与纳米仿生研究所,苏州 215123;苏州纳维科技有限公司,苏州 215123;江苏第三代半导体研究院,苏州 215000
- 折叠
摘要
氮化镓单晶具有高击穿电压、直接带隙、高饱和电子漂移速率、良好的化学稳定性等特性,在光电子器件和大功率电子器件中有广泛的应用.然而异质外延氮化镓会产生高位错密度,限制了氮化镓基器件的性能发挥.本研究以HVPE-GaN为籽晶,采用氨热法生长了氮化镓单晶,利用扫描电子显微镜(SEM),光学显微镜和湿法腐蚀研究了氨热法氮化镓单晶籽晶区至侧向生长区的位错演变.研究结果表明,侧向生长区的氮化镓单晶位错密度明显低于籽晶区,侧向生长超过25 μm后,位错密度降低2个数量级.
Abstract
Gallium nitride(GaN)single crystal has the characteristics of high breakdown voltage,direct band gap,high saturated electron drift rate,good chemical stability,etc.,and has been widely used in optoelectronic devices and high-power electronic devices.However,the heteroepitaxial of GaN produces a high dislocation density,which limits the performance of GaN devices.In this study,GaN single crystal was grown by ammonothermal method using HVPE-GaN as a seed crystal.The dislocation evolution from the seed crystal region to the lateral growth region of GaN single crystal was studied by scanning electron microscopy(SEM),optical microscopy and wet etching.The results show that the dislocation density of GaN single crystal in the lateral growth region is obviously lower than that in the seed crystal region,and the dislocation density decreases by 2 orders of magnitude when the lateral growth exceeds 25 μm.
关键词
氮化镓单晶/氨热法/侧向生长/位错密度/腐蚀坑Key words
GaN single crystal/ammonothermal method/lateral growth/dislocation density/etch pit引用本文复制引用
基金项目
国家重点研发计划(2021YFB3602000)
国家重点研发计划(2022YFB3605202)
国家自然科学基金(62074157)
国家自然科学基金(62104246)
江苏省重点研发计划(BE2021008)
出版年
2024
国家科技期刊平台
NSTL
万方数据