8英寸半导电型GaAs单晶衬底的制备与性能表征
Fabrication and Characterization of 8 Inch Semiconducting GaAs Single Crystal Substrate
任殿胜 1王志珍 1张舒惠 1王元立1
作者信息
- 1. 北京通美晶体技术股份有限公司,北京 101113
- 折叠
摘要
本文使用垂直梯度凝固(VGF)法制备了直径超过200 mm的Si掺杂GaAs单晶.通过多线切割、磨边、研磨、化学机械抛光和湿法化学清洗等加工工序制备出8英寸半导电型GaAs单晶衬底.使用X射线衍射、位错密度检测、霍尔测试、非接触式表面电阻率测试、光致发光测试和晶圆表面缺陷检测等对8英寸GaAs衬底的晶体质量、位错、电学性能和表面质量等特性进行了测试分析.结果表明:衬底(400)衍射峰半峰全宽低于0.009°;平均位错密度低于30 cm-2,其中,晶体头部平均位错密度为1.7 cmI-2,且有98.87％的面积位错密度为0;衬底面内电阻率标准差小于6％,面内光致发光强度标准差小于4％,≥0.2 μm的表面光点缺陷(LPD)个数小于10.上述结果表明,所制备的8英寸GaAs衬底质量优异,满足外延器件对高质量衬底的要求.
Abstract
Si doped GaAs single crystal with diameter over 200 mm was prepared by vertical gradient freeze(VGF)method.The 8 inch GaAs single crystal substrate was obtained through multi-line cutting,edging,grinding,chemical mechanical polishing and wet cleaning.The crystal quality,dislocation density,electrical properties and surface quality of 8 inch GaAs substrate were characterized by X-ray diffraction,dislocation density inspection,Hall measurement,non-contact surface resistivity measurement,photoluminescence and wafer surface defect inspection.The results show that the full width of half maximum(FWHM)of substrate(400)diffraction peak is smaller than 0.009°,the average dislocation density is lower than 30 cm-2,the lowest dislocation density is 1.7 cm-2and 98.87％area are zero dislocation.Moreover,the standard deviation of surface resistivity and photoluminescence intensity are smaller than 6％and 4％,respectively.The number of the spot with light point defect(LPD)≥0.2 μm is less than 10.The results show that the 8 inch semiconducting GaAs single crystal substrate with excellent performance is developed and can be used as the high quality substrate for epitaxial growth and devices fabrication.
关键词
GaAs/垂直梯度凝固/8英寸/单晶衬底/位错密度Key words
GaAs/vertical gradient freeze/8 inch/single crystal substrate/dislocation density引用本文复制引用
出版年
2024
国家科技期刊平台
NSTL
万方数据